Effects of Pd addition on the interfacial reactions between Cu and Al during ultrasonic welding
文献类型：期刊论文
| 作者 | Du, Yahong2,5; Wen, Ming3; Ji, Hongjun4; Li, Mingyu4; Liu, Zhi-Quan1,2,5 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2019-07-01 |
| 卷号 | 30期号:14页码:12840-12850 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-019-01729-8 |
| 通讯作者 | Liu, Zhi-Quan(zqliu@siat.ac.cn) |
| 英文摘要 | The interfacial reactions between Cu and Al during ultrasonic welding were investigated, focusing on the effect of Pd in Pd-coated Cu and Pd-alloyed Cu (0.3 wt% and 2 wt% PdCu). For Pd-coated Cu-Al bonding, it is found that Pd layer would act as diffusion barrier layer at the interface, and intermetallic compounds (IMCs) formed at Pd-free location for as-welded condition. As annealing time increases, Cu atoms and Al atoms bypassed the fractured Pd layer to form IMCs at the interface. Combining experimental observations, a model of Pd diffusion barrier effect was first proposed at the Pd-coated Cu-Al interface. For Pd-alloyed Cu-Al bonding, Pd can promote the atomic diffusion of active elements and accelerate the formation of IMCs, and excessive 2 wt% Pd addition can lead to the appearance of voids and cracks at interface, which is destructive for reliable interconnection structure. The thickness of the interfacial IMCs for pure Cu and 0.3 wt% PdCu at different heat treatment conditions has a linear relationship with the square root of time, which means that the growth of IMCs is controlled by volume diffusion. The diffusion activation energy of IMCs for 0.3 wt% PdCu (46.08 kJ/mol, 52.88kJ/mol, and 65.35 kJ/mol for Cu9Al4, CuAl and CuAl2 respectively) was smaller than that for pure Cu (60.24 kJ/mol, 58.12kJ/mol, and 82.94 kJ/mol for Cu9Al4, CuAl and CuAl2 respectively). Furthermore, the percentage of Cu9Al4 in the whole IMC decreased for 0.3 wt% PdCu, which can reduce the halogen corrosion from epoxy molding compound (EMC) during the reliability test of highly accelerated temperature and humidity stress testing (HAST). |
| 资助项目 | National Key R&D Program of China[2017YFB0305700] ; National Natural Science Foundation of China[51564025] ; National and Local Joint Engineering Laboratory of Advanced Electronic Packaging Materials (Shenzhen Development and Reform Commission)[2017-934] ; Fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals[SKL-SPM-201803] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000476518000002 |
| 出版者 | SPRINGER |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China ; National and Local Joint Engineering Laboratory of Advanced Electronic Packaging Materials (Shenzhen Development and Reform Commission) ; Fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals |
| 源URL | [http://ir.imr.ac.cn/handle/321006/134632]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Zhi-Quan |
| 作者单位 | 1.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 3.Kunming Inst Precious Met, Kunming 650106, Yunnan, Peoples R China 4.Harbin Inst Technol Shenzhen, State Key Lab Adv Welding & Joining, Shenzhen 518055, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Du, Yahong,Wen, Ming,Ji, Hongjun,et al. Effects of Pd addition on the interfacial reactions between Cu and Al during ultrasonic welding[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019,30(14):12840-12850. |
| APA | Du, Yahong,Wen, Ming,Ji, Hongjun,Li, Mingyu,&Liu, Zhi-Quan.(2019).Effects of Pd addition on the interfacial reactions between Cu and Al during ultrasonic welding.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,30(14),12840-12850. |
| MLA | Du, Yahong,et al."Effects of Pd addition on the interfacial reactions between Cu and Al during ultrasonic welding".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30.14(2019):12840-12850. |
入库方式： OAI收割
来源：金属研究所
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