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Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

文献类型：期刊论文

作者Xue, Fei2; He, Xin2; Retamal, Jose Ramon Duran4; Han, Ali2; Zhang, Junwei2; Liu, Zhixiong2; Huang, Jing-Kai2; Hu, Weijin3; Tung, Vincent2; He, Jr-Hou4
刊名ADVANCED MATERIALS
出版日期2019-07-01
卷号31期号:29页码:9
关键词ferroelectrics gate tunability memristors multidirectional programming
ISSN号0935-9648
DOI10.1002/adma.201901300
通讯作者He, Jr-Hou(jrhaus.he@kaust.edu.sa) ; Li, Lain-Jong(li.l@unsw.edu.au) ; Zhang, Xixiang(xixiang.zhang@kaust.edu.sa)
英文摘要Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal alpha-In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of alpha-In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical alpha-In2Se3 memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 x 10(9) in.(-2) and a resistance-switching ratio of well over 10(3). A multidirectionally operated alpha-In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric alpha-In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.
资助项目King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2015-2634-CRG4] ; King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2016-2996-CRG5] ; Hundred Talents Program of the Chinese Academy of Sciences
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000477975900021
出版者WILEY-V C H VERLAG GMBH
资助机构King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) ; Hundred Talents Program of the Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/134641]  
专题金属研究所_中国科学院金属研究所
通讯作者He, Jr-Hou; Li, Lain-Jong; Zhang, Xixiang
作者单位1.Univ New South Wales, Dept Mat Sci & Engn, Sydney, NSW 2052, Australia
2.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
4.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
推荐引用方式
GB/T 7714		 Xue, Fei,He, Xin,Retamal, Jose Ramon Duran,et al. Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric[J]. ADVANCED MATERIALS,2019,31(29):9.
APA Xue, Fei.,He, Xin.,Retamal, Jose Ramon Duran.,Han, Ali.,Zhang, Junwei.,...&Zhang, Xixiang.(2019).Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric.ADVANCED MATERIALS,31(29),9.
MLA Xue, Fei,et al."Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric".ADVANCED MATERIALS 31.29(2019):9.

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来源：金属研究所

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