Defective graphene as a high-efficiency Raman enhancement substrate
文献类型：期刊论文
| 作者 | Zhao, Tong2,3; Liu, Zhibo2; Xin, Xing1,2; Cheng, Hui-Ming2,3,4; Ren, Wencai2,3 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2019-09-01 |
| 卷号 | 35期号:9页码:1996-2002 |
| 关键词 | Defective graphene Raman enhancement Chemical vapor deposition Bubbling transfer |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2019.05.012 |
| 通讯作者 | Ren, Wencai(wcren@imr.ac.cn) |
| 英文摘要 | Pristine graphene (PG) has been demonstrated to be an excellent substrate for Raman enhancement, which is called graphene-enhanced Raman scattering. However, the chemically inert and hydrophobic surface of PG hinders the adsorption of molecules especially in aqueous solutions, and consequently limits the Raman enhanced efficiency. Here, we synthesized defective graphene (DG) films by chemical vapor deposition on Au. which has a defect density of similar to 2.0 x 10(11) cm(-2). The DG shows a much better wettability than PG towards dye solution. Combining with the strong adsorption ability of defects to molecules, DG shows greatly enhanced efficiency than PG with perfect lattice. For example, the detection limit for rhodamine B can reach 2 x 10(-9) M for DG while it is on the order of 10(-7) M for PG. In addition, DG has high enhancement uniformity and the Au substrate can be reused after electrochemical bubbling transfer. These advantages suggest the great potential of the DG grown on Au for practical applications in environmental monitoring. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Key R&D Program of China[2016YFA0200101] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51861135201] ; Chinese Academy of Sciences[1743211] ; Chinese Academy of Sciences[YSB20160011] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000475870600023 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences |
| 源URL | [http://ir.imr.ac.cn/handle/321006/134816]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ren, Wencai |
| 作者单位 | 1.Univ Chinese Acad Sci, Shenyang 110016, Liaoning, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 4.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Tong,Liu, Zhibo,Xin, Xing,et al. Defective graphene as a high-efficiency Raman enhancement substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2019,35(9):1996-2002. |
| APA | Zhao, Tong,Liu, Zhibo,Xin, Xing,Cheng, Hui-Ming,&Ren, Wencai.(2019).Defective graphene as a high-efficiency Raman enhancement substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,35(9),1996-2002. |
| MLA | Zhao, Tong,et al."Defective graphene as a high-efficiency Raman enhancement substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 35.9(2019):1996-2002. |
入库方式： OAI收割
来源：金属研究所
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