中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Resistive Switching Behavior in Ferroelectric Heterostructures

文献类型:期刊论文

作者Wang, Zhan Jie1,2; Bai, Yu1,2
刊名SMALL
出版日期2019-08-01
卷号15期号:32页码:13
关键词conductivity ferroelectric heterostructures ferroelectricity resistive switching
ISSN号1613-6810
DOI10.1002/smll.201805088
通讯作者Wang, Zhan Jie(wangzj@imr.ac.cn)
英文摘要Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.
资助项目basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science[2017RP15] ; key research and development plan of Liaoning Province[2017104002] ; basic scientific research projects of colleges and universities of Liaoning Province[LZGD2017005] ; major project of industrial technology research institute of Liaoning colleges and universities[201824010]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000480331100005
出版者WILEY-V C H VERLAG GMBH
资助机构basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science ; key research and development plan of Liaoning Province ; basic scientific research projects of colleges and universities of Liaoning Province ; major project of industrial technology research institute of Liaoning colleges and universities
源URL[http://ir.imr.ac.cn/handle/321006/134895]  
专题金属研究所_中国科学院金属研究所
通讯作者Wang, Zhan Jie
作者单位1.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Wang, Zhan Jie,Bai, Yu. Resistive Switching Behavior in Ferroelectric Heterostructures[J]. SMALL,2019,15(32):13.
APA Wang, Zhan Jie,&Bai, Yu.(2019).Resistive Switching Behavior in Ferroelectric Heterostructures.SMALL,15(32),13.
MLA Wang, Zhan Jie,et al."Resistive Switching Behavior in Ferroelectric Heterostructures".SMALL 15.32(2019):13.

入库方式: OAI收割

来源:金属研究所

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