Resistive Switching Behavior in Ferroelectric Heterostructures
文献类型：期刊论文
| 作者 | Wang, Zhan Jie1,2; Bai, Yu1,2 |
| 刊名 | SMALL
 |
| 出版日期 | 2019-08-01 |
| 卷号 | 15期号:32页码:13 |
| 关键词 | conductivity ferroelectric heterostructures ferroelectricity resistive switching |
| ISSN号 | 1613-6810 |
| DOI | 10.1002/smll.201805088 |
| 通讯作者 | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 英文摘要 | Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted. |
| 资助项目 | basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science[2017RP15] ; key research and development plan of Liaoning Province[2017104002] ; basic scientific research projects of colleges and universities of Liaoning Province[LZGD2017005] ; major project of industrial technology research institute of Liaoning colleges and universities[201824010] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000480331100005 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 资助机构 | basic research and common key technology innovation projects of Shenyang National Laboratory for Materials Science ; key research and development plan of Liaoning Province ; basic scientific research projects of colleges and universities of Liaoning Province ; major project of industrial technology research institute of Liaoning colleges and universities |
| 源URL | [http://ir.imr.ac.cn/handle/321006/134895]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Zhan Jie |
| 作者单位 | 1.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhan Jie,Bai, Yu. Resistive Switching Behavior in Ferroelectric Heterostructures[J]. SMALL,2019,15(32):13. |
| APA | Wang, Zhan Jie,&Bai, Yu.(2019).Resistive Switching Behavior in Ferroelectric Heterostructures.SMALL,15(32),13. |
| MLA | Wang, Zhan Jie,et al."Resistive Switching Behavior in Ferroelectric Heterostructures".SMALL 15.32(2019):13. |
入库方式： OAI收割
来源：金属研究所
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