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A Flexible Carbon Nanotube Sen-Memory Device

文献类型：期刊论文

作者Qu, Ting-Yu1,6,7; Sun, Yun1; Chen, Mao-Lin1,2; Liu, Zhi-Bo1; Zhu, Qian-Bing1,2; Wang, Bing-Wei1,2; Zhao, Tian-Yang1,2; Liu, Chi1; Tan, Jun1; Qiu, Song3
刊名ADVANCED MATERIALS
出版日期2020-01-24
卷号32期号:9页码:8
关键词carbon nanotubes floating-gate devices optical sensing and memory flexible electronics
ISSN号0935-9648
DOI10.1002/adma.201907288
通讯作者Qiu, Song(sqiu2010@sinano.ac.cn) ; Han, Zheng(zhenghan1985@gmail.com) ; Cheng, Hui-Ming(cheng@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
英文摘要In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of approximate to 10(6), a long-term retention of approximate to 10(8) s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.
资助项目National Natural Science Foundation of China[51625203] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51272257] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[51390473] ; National Natural Science Foundation of China[51502304] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51371178] ; National Natural Science Foundation of China[51372254] ; National Natural Science Foundation of China[11974357] ; National Natural Science Foundation of China[U1932151] ; National Key Research and Development Program of China[2016YFB0401104] ; Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; Ministry of Science and Technology of China[2016YFA0200102] ; China Postdoctoral Science Foundation Secondclass General Financial Grant[2015M58137] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; CAS/SAFEA International Partnership Program for Creative Research Teams, Project of Shenyang National Laboratory for Materials Science[L2019R24] ; Thousand Talent Program for Young Outstanding Scientists ; Key Research Program of Frontier Sciences, CAS[ZDBS-LY-JSC027] ; NSFC[21373262]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000509008300001
出版者WILEY-V C H VERLAG GMBH
资助机构National Natural Science Foundation of China ; National Key Research and Development Program of China ; Ministry of Science and Technology of China ; China Postdoctoral Science Foundation Secondclass General Financial Grant ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences ; CAS/SAFEA International Partnership Program for Creative Research Teams, Project of Shenyang National Laboratory for Materials Science ; Thousand Talent Program for Young Outstanding Scientists ; Key Research Program of Frontier Sciences, CAS ; NSFC
源URL[http://ir.imr.ac.cn/handle/321006/136688]  
专题金属研究所_中国科学院金属研究所
通讯作者Qiu, Song; Han, Zheng; Cheng, Hui-Ming; Sun, Dong-Ming
作者单位1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd, Suzhou 215123, Peoples R China
4.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, 2699 Qianjin St, Changchun 130012, Peoples R China
5.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyun Rd, Shenzhen 518055, Peoples R China
6.Natl Univ Singapore, Grad Sch Integrat Sci & Engn, Singapore 119077, Singapore
7.Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 119077, Singapore
推荐引用方式
GB/T 7714		 Qu, Ting-Yu,Sun, Yun,Chen, Mao-Lin,et al. A Flexible Carbon Nanotube Sen-Memory Device[J]. ADVANCED MATERIALS,2020,32(9):8.
APA Qu, Ting-Yu.,Sun, Yun.,Chen, Mao-Lin.,Liu, Zhi-Bo.,Zhu, Qian-Bing.,...&Sun, Dong-Ming.(2020).A Flexible Carbon Nanotube Sen-Memory Device.ADVANCED MATERIALS,32(9),8.
MLA Qu, Ting-Yu,et al."A Flexible Carbon Nanotube Sen-Memory Device".ADVANCED MATERIALS 32.9(2020):8.

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来源：金属研究所

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