Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films
文献类型：期刊论文
| 作者 | Yang, Bing1; Yu, Biao1,2; Li, Haining1,2; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,3 |
| 刊名 | CARBON
 |
| 出版日期 | 2020 |
| 卷号 | 156页码:242-252 |
| 关键词 | Color center Nano-crystalline diamond Luminescence Surface modification Thermal treatment |
| ISSN号 | 0008-6223 |
| DOI | 10.1016/j.carbon.2019.09.054 |
| 通讯作者 | Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | Silicon vacancy (SiV) centers in CVD-deposited nanodiamond particles or films always exhibit a photoluminescent (PL)-quenching behavior. Herein, in order to overcome this issue, air annealing of nanocrystalline diamond (NCD) films with uniform doping of Si atoms is employed to improve the PL emission efficiency of SiV centers. Without severe mass loss in diamond, SiV centers exhibit an increased PL emission intensity at 738 nmwith an increased annealing temperature and time. In comparison to the untreated film, the maximum PL enhancement reaches about 200 and 1473 folds when the NCD films are annealed at 600 degrees C for 60 min and 700 degrees C for 20 min, respectively. Such giant increase in SiV PL emission is mainly attributed to the transition of diamond surface from hydrogen to oxygen termination together with the optimized crystalline quality of the annealed films, as confirmed by the HRTEM, Raman and XPS measurements. A schematic model based on the theory of surface band bending is proposed to elucidate the mechanism of the SiV PL enhancement in oxygen-terminated NCD films: a near-surface light trap layer formed in hydrogen-terminated NCD is converted during the oxidation process, leading to the additional collection of SiV PL emission from the inner layer. (C) 2019 Elsevier Ltd. All rights reserved. |
| 资助项目 | National Natural Science Foundation of China[51872294] |
| WOS研究方向 | Chemistry ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000509332200023 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/136732]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Bing; Jiang, Xin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany |
| 推荐引用方式 GB/T 7714 | Yang, Bing,Yu, Biao,Li, Haining,et al. Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films[J]. CARBON,2020,156:242-252. |
| APA | Yang, Bing,Yu, Biao,Li, Haining,Huang, Nan,Liu, Lusheng,&Jiang, Xin.(2020).Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films.CARBON,156,242-252. |
| MLA | Yang, Bing,et al."Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films".CARBON 156(2020):242-252. |
入库方式： OAI收割
来源：金属研究所
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