Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
文献类型：期刊论文
| 作者 | Xia, Xiuxin2,3; Sun, Xingdan2,3; Wang, Hanwen2,3; Li, Xiaoxi1,2,3 |
| 刊名 | CRYSTALS
 |
| 出版日期 | 2020-03-01 |
| 卷号 | 10期号:3页码:9 |
| 关键词 | contact alloying GaTe Pd electrode |
| ISSN号 | 2073-4352 |
| DOI | 10.3390/cryst10030144 |
| 通讯作者 | Wang, Hanwen(hwwang15s@imr.ac.cn) ; Li, Xiaoxi(xxli@imr.ac.cn) |
| 英文摘要 | Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of similar to 104 on HfO2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs. |
| 资助项目 | National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[51627801] |
| WOS研究方向 | Crystallography ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000523512100062 |
| 出版者 | MDPI |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/137887]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Hanwen; Li, Xiaoxi |
| 作者单位 | 1.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,et al. Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors[J]. CRYSTALS,2020,10(3):9. |
| APA | Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,&Li, Xiaoxi.(2020).Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors.CRYSTALS,10(3),9. |
| MLA | Xia, Xiuxin,et al."Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors".CRYSTALS 10.3(2020):9. |
入库方式： OAI收割
来源：金属研究所
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