Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity
文献类型:期刊论文
作者 | Yao, Tingting2; Jiang, Yixiao2; Chen, Chunlin2; Yan, Xuexi2; Tao, Ang2; Yang, Lixin2; Sugo, Kenyu2,3; Ohta, Hiromichi3; Ye, Hengqiang2; Ikuhara, Yuichi1,4,5 |
刊名 | NANO LETTERS |
出版日期 | 2020-02-01 |
卷号 | 20期号:2页码:1047-1053 |
ISSN号 | 1530-6984 |
关键词 | Ferroelectric materials phase transformation one-dimensional conductivity transmission electron microscopy electron irradiation |
DOI | 10.1021/acs.nanolett.9b04210 |
通讯作者 | Ma, Xiuliang(xlma@imr.ac.cn) |
英文摘要 | Ferroelectricity and electrical conductivity are two fundamentally incompatible properties that are difficult to simultaneously achieve in a material. Here, we combine these two contradictory properties by embedding conducting SrNbO3 micro/nanopillars into a ferroelectric SrNbO3.5 (i.e., Sr2Nb2O7) thin film. The high-T-c ferroelectric SrNbO3.5 thin film is epitaxially grown on a LaAlO3 substrate by pulsed laser deposition. The conducting SrNbO3 micro/nanopillars are introduced into the film via an electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation triggered by a focused electron beam. The sizes and distribution of the SrNbO3 micro/nanopillars can be accurately controlled through artificial manipulation of the electron-irradiation-induced SrNbO3.5-to-SrNbO3 phase transformation. The ferroelectric SrNbO3/SrNbO3.5 thin film with an in-plane polarization exhibits an electrical conductivity in the out-of-plane direction. Such conducting ferroelectric thin films may lead to the discovery of plentiful physical phenomena and have great potential for pyroelectric, photoelectric, and multiferroic applications. |
资助项目 | National Natural Science Foundation of China[51801215] ; National Natural Science Foundation of China[51771200] ; National Natural Science Foundation of China[51671194] ; Key Research Program of Frontier Sciences, CAS[QYZDY-SSW-JSC027] ; Key Research Program of Frontier Sciences, CAS[QYZDJ-SSW-JSC010] ; Thousand Youth Talents Plan of China, LiaoNing Revitalization Talents Program[XLYC1802088] ; Natural Science Foundation of LiaoNing Province[20180550885] ; MEXT[12024046] ; JSPS[17H06094] ; JSPS[17H01314] ; JSPS[19H05791] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000514255400030 |
资助机构 | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences, CAS ; Thousand Youth Talents Plan of China, LiaoNing Revitalization Talents Program ; Natural Science Foundation of LiaoNing Province ; MEXT ; JSPS |
源URL | [http://ir.imr.ac.cn/handle/321006/137927] |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Ma, Xiuliang |
作者单位 | 1.Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan 4.Tohoku Univ, Adv Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan 5.Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan |
推荐引用方式 GB/T 7714 | Yao, Tingting,Jiang, Yixiao,Chen, Chunlin,et al. Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity[J]. NANO LETTERS,2020,20(2):1047-1053. |
APA | Yao, Tingting.,Jiang, Yixiao.,Chen, Chunlin.,Yan, Xuexi.,Tao, Ang.,...&Ma, Xiuliang.(2020).Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity.NANO LETTERS,20(2),1047-1053. |
MLA | Yao, Tingting,et al."Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity".NANO LETTERS 20.2(2020):1047-1053. |
入库方式: OAI收割
来源:金属研究所
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