Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film
文献类型：期刊论文
| 作者 | Yan, C. H.1,3; Wei, F.1,3; Bai, Y.1,3; Wang, F.1,3; Zhang, A. Q.1,2,3; Ma, S.1; Liu, W.1; Zhang, Z. D.1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2020-05-01 |
| 卷号 | 44页码:223-228 |
| ISSN号 | 1005-0302 |
| 关键词 | Topological crystalline insulator Surface state SnTe |
| DOI | 10.1016/j.jmst.2019.10.033 |
| 通讯作者 | Ma, S.(songma@imr.ac.cn) |
| 英文摘要 | Topological crystalline insulator (TCI) as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence, the structure investigation provides a solid basement for tuning its topological transport properties. On SrTiO3 (111) substrate, the SnTe film was found to be epitaxial growth only along [001] while not [111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe (001) film. The transport properties of SnTe (001) film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into SnTe, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI SnTe film systems will have the potential application in future spintronics devices. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| WOS记录号 | WOS:000522863000023 |
| 资助机构 | National Natural Science Foundation of China ; National Key R&D Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/137960]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ma, S. |
| 作者单位 | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan, C. H.,Wei, F.,Bai, Y.,et al. Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,44:223-228. |
| APA | Yan, C. H..,Wei, F..,Bai, Y..,Wang, F..,Zhang, A. Q..,...&Zhang, Z. D..(2020).Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,44,223-228. |
| MLA | Yan, C. H.,et al."Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 44(2020):223-228. |
入库方式： OAI收割
来源：金属研究所
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