Second Time-Scale Synthesis of High-Quality Graphite Films by Quenching for Effective Electromagnetic Interference Shielding
文献类型:期刊论文
作者 | Zhou, Tianya1,2; Xu, Chuan2; Liu, Haopeng3; Wei, Qinwei1,2; Wang, Han1,2; Zhang, Jiangang1,2; Zhao, Tong1,2; Liu, Zhibo2; Zhang, Xuefeng3; Zeng, You2 |
刊名 | ACS NANO
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出版日期 | 2020-03-24 |
卷号 | 14期号:3页码:3121-3128 |
关键词 | graphite film liquid carbon source quenching electrical conductivity mechanical strength flexible electromagnetic interference shielding |
ISSN号 | 1936-0851 |
DOI | 10.1021/acsnano.9b08169 |
通讯作者 | Ren, Wencai(wcren@imr.ac.cn) |
英文摘要 | Graphite film has many remarkable properties and intriguing applications from energy storage, electromagnetic interference (EMI) shielding, and thermal management to ultraviolet lithography. However, the existing synthesis methods require an extremely high processing temperature of similar to 3000 degrees C and/or long processing time of typically hours. Here, we report an ultrafast synthesis of tens of nanometer-thick high-quality graphite films within a few seconds by quenching a hot Ni foil in ethanol. The vertical growth rate can reach over 64 nm s(-1), which is more than 2 orders of magnitude higher than those of the existing methods. Moreover, the films show excellent electrical conductivity (similar to 2.6 X 10(5) S/m) and mechanical strength (similar to 110 MPa) comparable to or even better than those synthesized by chemical vapor deposition. As an example, we demonstrate the potential of these graphite films for effective EMI shielding, which show a record absolute shielding effectiveness of 481,000 dB cm(2) g(-1), outperforming all the reported synthetic materials. |
资助项目 | National Key R&D Program of China[2016YFA0200101] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of Chinese Academy of Sciences[ZDBS-LY-JSC027] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Enterpreneurial Teams[2017ZT07C341] ; Economic, Trade, and Information Commission of Shenzhen Municipality[201901171523] ; Development and Reform Commission of Shenzhen Municipality |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
语种 | 英语 |
WOS记录号 | WOS:000526301400045 |
出版者 | AMER CHEMICAL SOC |
资助机构 | National Key R&D Program of China ; National Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Enterpreneurial Teams ; Economic, Trade, and Information Commission of Shenzhen Municipality ; Development and Reform Commission of Shenzhen Municipality |
源URL | [http://ir.imr.ac.cn/handle/321006/138162] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Ren, Wencai |
作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat MOE, Shenyang 110819, Peoples R China 4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, TBSI, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou, Tianya,Xu, Chuan,Liu, Haopeng,et al. Second Time-Scale Synthesis of High-Quality Graphite Films by Quenching for Effective Electromagnetic Interference Shielding[J]. ACS NANO,2020,14(3):3121-3128. |
APA | Zhou, Tianya.,Xu, Chuan.,Liu, Haopeng.,Wei, Qinwei.,Wang, Han.,...&Ren, Wencai.(2020).Second Time-Scale Synthesis of High-Quality Graphite Films by Quenching for Effective Electromagnetic Interference Shielding.ACS NANO,14(3),3121-3128. |
MLA | Zhou, Tianya,et al."Second Time-Scale Synthesis of High-Quality Graphite Films by Quenching for Effective Electromagnetic Interference Shielding".ACS NANO 14.3(2020):3121-3128. |
入库方式: OAI收割
来源:金属研究所
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