Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires
文献类型：期刊论文
| 作者 | Wei, LingNan1,2; Wang, ZhenHua1,2; Zhang, ZhiDong1,2; Liu, Chieh-Wen3; Gao, Xuan P. A.3 |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2020-05-01 |
| 卷号 | 13期号:5页码:1332-1338 |
| 关键词 | Topological insulator nanowire ambipolar conduction bismuth selenide bismuth telluride linear magneto-resistance weak anti-localization |
| ISSN号 | 1998-0124 |
| DOI | 10.1007/s12274-019-2577-3 |
| 通讯作者 | Wang, ZhenHua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu) |
| 英文摘要 | We report the composition and back-gate voltage tuned transport properties of ternary compound Bi-2(Te1-xSex)(3) nanowires synthesized by chemical vapor deposition (CVD). It is found that the population of bulk carriers can be suppressed effectively with increasing the Se concentration x. In Bi-2(Te1-xSex)(3) nanowires with x = 25% +/- 5%, the ambipolar surface conduction associated with tuning the Fermi energy across the Dirac point of topological surface states is induced by applying a back-gate voltage. Importantly, we find that while the magneto-resistance (MR) follows the weak antilocalization (WAL) behavior when the Fermi level is tuned away from the Dirac point, MR is enhanced in magnitude and turns more linear in the whole magnetic field range (between +/- 9 T) near the Dirac point. The observation of the enhanced linear magneto-resistance (LMR) and crossover from WAL to LMR, near the Dirac point provides a deeper insight into understanding the nature of topological insulator's surface transport and the relation between these two widely observed magneto-transport phenomena. |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000536754100013 |
| 出版者 | TSINGHUA UNIV PRESS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/138906]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, ZhenHua; Gao, Xuan P. A. |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,et al. Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires[J]. NANO RESEARCH,2020,13(5):1332-1338. |
| APA | Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,Liu, Chieh-Wen,&Gao, Xuan P. A..(2020).Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires.NANO RESEARCH,13(5),1332-1338. |
| MLA | Wei, LingNan,et al."Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires".NANO RESEARCH 13.5(2020):1332-1338. |
入库方式： OAI收割
来源：金属研究所
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