Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
文献类型：期刊论文
| 作者 | Li, Mingze1,2; Wang, Zhenhua1,2; Gao, Xuan P. A.3; Zhang, Zhidong1,2 |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2020-05-07 |
| 卷号 | 124期号:18页码:10135-10142 |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/acs.jpcc.0c01978 |
| 通讯作者 | Wang, Zhenhua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu) |
| 英文摘要 | As an exotic state of quantum matter, topological insulators like Bi2Se3 have potential applications in low power electronic and optoelectronic devices. Bi2Se3 nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi2Se3 nanoplates oriented vertically on the p-type Si substrate. This unconventional structure and geometry provide a higher effective absorption length for light absorption and potentially more efficient photocarrier transport via the topologically protected surface states or the basal plane of Bi2Se3 nanoplates. By compensating Bi2Se3 native defects with Cu doping, we achieve an increase of 42 times in the photocurrent when the Cu concentration is 3.87 at. %. Our work paves a way for exploring the excellent optoelectronic properties of topological insulator films with an unconventional orientation. |
| 资助项目 | National Natural Science Foundation of China (NSFC)[51971220] ; National Key R&D Program of China[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; Liaoning Revitalization Talents Program[XLYC1807122] ; United Foundation of Liaoning Province and National Laboratory for Materials Science[2019JH3] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000535175400051 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China (NSFC) ; National Key R&D Program of China ; Foundation of National Laboratory for Materials Science ; Liaoning Revitalization Talents Program ; United Foundation of Liaoning Province and National Laboratory for Materials Science |
| 源URL | [http://ir.imr.ac.cn/handle/321006/138984]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Zhenhua; Gao, Xuan P. A. |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,et al. Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2020,124(18):10135-10142. |
| APA | Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2020).Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection.JOURNAL OF PHYSICAL CHEMISTRY C,124(18),10135-10142. |
| MLA | Li, Mingze,et al."Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection".JOURNAL OF PHYSICAL CHEMISTRY C 124.18(2020):10135-10142. |
入库方式： OAI收割
来源：金属研究所
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