Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides
文献类型：期刊论文
| 作者 | Zhang, Ye2; Guo, Huaihong2; Sun, Wei2; Sun, Hongzhi2; Ali, Sajjad3,4; Zhang, Zhidong3; Saito, Riichiro1; Yang, Teng3 |
| 刊名 | JOURNAL OF RAMAN SPECTROSCOPY
 |
| 出版日期 | 2020-06-16 |
| 卷号 | 51期号:8页码:9 |
| 关键词 | intensity dip Raman intensity scaling strain effect TMDC |
| ISSN号 | 0377-0486 |
| DOI | 10.1002/jrs.5908 |
| 通讯作者 | Guo, Huaihong(hhguo@escience.cn) ; Yang, Teng(yangteng@imr.ac.cn) |
| 英文摘要 | Based on ab initio density functional calculation and nonresonant Raman theory, we calculate strain dependent Raman spectra of six kinds of transition-metal dichalcogenides (TMDCs). The biaxial strain dependence of Raman intensity and direct band gap in TMDC monolayers is systematically studied from which we show a scaling law of the Raman intensity and band gap. Out-of-planeA(1g)mode has vanishing intensity under a certain strain. Such a strain-induced behavior is found to be universal in the TMDC, and Raman intensity for the six TMDCs can be scaled as a function of Gruneissen parameter gamma and Raman wavenumbers in the frame of Morse-type function. The scaling behavior of Raman intensity and direct band gap in TMDCs indicates of some material-independent picture which can be used for new understanding of properties and design of new-type functional devices for electronic and optoelectronic application based on strain engineering. |
| 资助项目 | JSPS KAKENHI[JP18H01810] ; NSFC[51702146] ; NSFC[U1537204] ; College Students' innovation and entrepreneurship projects[201710148000072] |
| WOS研究方向 | Spectroscopy |
| 语种 | 英语 |
| WOS记录号 | WOS:000540447100001 |
| 出版者 | WILEY |
| 资助机构 | JSPS KAKENHI ; NSFC ; College Students' innovation and entrepreneurship projects |
| 源URL | [http://ir.imr.ac.cn/handle/321006/139285]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guo, Huaihong; Yang, Teng |
| 作者单位 | 1.Tohoku Univ, Dept Phys, Sendai, Miyagi, Japan 2.Liaoning Shihua Univ, Coll Sci, Fushun 113001, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Ye,Guo, Huaihong,Sun, Wei,et al. Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides[J]. JOURNAL OF RAMAN SPECTROSCOPY,2020,51(8):9. |
| APA | Zhang, Ye.,Guo, Huaihong.,Sun, Wei.,Sun, Hongzhi.,Ali, Sajjad.,...&Yang, Teng.(2020).Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides.JOURNAL OF RAMAN SPECTROSCOPY,51(8),9. |
| MLA | Zhang, Ye,et al."Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides".JOURNAL OF RAMAN SPECTROSCOPY 51.8(2020):9. |
入库方式： OAI收割
来源：金属研究所
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