中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 金属研究所
  3. 中国科学院金属研究所
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

文献类型：期刊论文

作者Ren, Qingyong2; Fu, Chenguang3; Qiu, Qinyi4; Dai, Shengnan5; Liu, Zheyuan2; Masuda, Takatsugu6; Asai, Shinichiro6; Hagihala, Masato7; Lee, Sanghyun7; Torri, Shuki7
刊名NATURE COMMUNICATIONS
出版日期2020-06-19
卷号11期号:1页码:9
ISSN号2041-1723
DOI10.1038/s41467-020-16913-2
通讯作者Fu, Chenguang(Chenguang.Fu@cpfs.mpg.de) ; Yang, Jiong(jiongy@t.shu.edu.cn) ; Ma, Jie(jma3@sjtu.edu.cn)
英文摘要Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance. Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.
资助项目National Science Foundation of China[11774223] ; National Science Foundation of China[U1732154] ; National Science Foundation of China[51761135127] ; Shanghai talent program ; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)[392228380] ; Alexander von Humboldt Foundation ; Natural Science Foundation of China[51761135127] ; Natural Science Foundation of China[11674211] ; 111 project[D16002] ; National Science Fund for Distinguished Young Scholars[51725102] ; J-PARC/MLF[2017A0071] ; J-PARC/MLF[2018B0281]
WOS研究方向Science & Technology - Other Topics
语种英语
出版者NATURE PUBLISHING GROUP
WOS记录号WOS:000545686200010
资助机构National Science Foundation of China ; Shanghai talent program ; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) ; Alexander von Humboldt Foundation ; Natural Science Foundation of China ; 111 project ; National Science Fund for Distinguished Young Scholars ; J-PARC/MLF
源URL[http://ir.imr.ac.cn/handle/321006/139595]  
专题金属研究所_中国科学院金属研究所
通讯作者Fu, Chenguang; Yang, Jiong; Ma, Jie
作者单位1.Sokendai, Dept Mat Struct Sci, Tokai, Ibaraki 3191106, Japan
2.Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
3.Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany
4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
5.Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China
6.Univ Tokyo, Inst Solid State Phys, Neutron Sci Lab, Kashiwa, Chiba 2778581, Japan
7.High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tokai, Ibaraki 3191106, Japan
8.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
9.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
10.Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China
推荐引用方式
GB/T 7714		 Ren, Qingyong,Fu, Chenguang,Qiu, Qinyi,et al. Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials[J]. NATURE COMMUNICATIONS,2020,11(1):9.
APA Ren, Qingyong.,Fu, Chenguang.,Qiu, Qinyi.,Dai, Shengnan.,Liu, Zheyuan.,...&Ma, Jie.(2020).Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials.NATURE COMMUNICATIONS,11(1),9.
MLA Ren, Qingyong,et al."Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials".NATURE COMMUNICATIONS 11.1(2020):9.

入库方式： OAI收割

来源：金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。