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Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties

文献类型：期刊论文

作者Li, Wei2,3; Huang, Jianqi1; Han, Bo4,5; Xie, Chunyu2; Huang, Xiaoxiao2,3; Tian, Kesong2,3; Zeng, Yi2,3; Zhao, Zijing2,3; Gao, Peng4,5,6; Zhang, Yanfeng2
刊名ADVANCED SCIENCE
出版日期2020-07-01
页码9
关键词2D molten-salt-assisted chemical vapor deposition molybdenum disulfide substitutional doping
DOI10.1002/advs.202001080
通讯作者Hou, Yanglong(hou@pku.edu.cn)
英文摘要Substitutional doping of layered transition metal dichalcogenides (TMDs) has been proved to be an effective route to alter their intrinsic properties and achieve tunable bandgap, electrical conductivity and magnetism, thus greatly broadening their applications. However, achieving valid substitutional doping of TMDs remains a great challenge to date. Herein, a distinctive molten-salt-assisted chemical vapor deposition (MACVD) method is developed to match the volatilization of the dopants perfectly with the growth process of monolayer MoS2, realizing the substitutional doping of transition metal Fe, Co, and Mn. This doping strategy effectively alters the electronic structure and phononic properties of the pristine MoS2. In addition, a temperature-dependent Raman spectrum is employed to explore the effect of dopants on the lattice dynamics and first-order temperature coefficient of monolayer MoS2, and this doping effect is illustrated in depth combined with the theoretical calculation. This work provides an intriguing and powerful doping strategy for TMDs through employing molten salt in the CVD system, paving the way for exploring new properties of 2D TMDs and extending their applications into spintronics, catalytic chemistry and photoelectric devices.
资助项目National Key R&D Program of China[2017YFA0206301] ; National Key R&D Program of China[2016YFA0200102] ; National Natural Science Foundation of China[51631001] ; National Natural Science Foundation of China[51590882] ; National Natural Science Foundation of China[51672007] ; National Natural Science Foundation of China[11974023]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
出版者WILEY
WOS记录号WOS:000544600400001
资助机构National Key R&D Program of China ; National Natural Science Foundation of China
源URL[http://ir.imr.ac.cn/handle/321006/139674]  
专题金属研究所_中国科学院金属研究所
通讯作者Hou, Yanglong
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
3.Beijing Innovat Ctr Engn Sci & Adv Technol BIC ES, Beijing Key Lab Magnetoelect Mat & Devices BKL MM, Beijing 100871, Peoples R China
4.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
5.Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
6.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714		 Li, Wei,Huang, Jianqi,Han, Bo,et al. Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties[J]. ADVANCED SCIENCE,2020:9.
APA Li, Wei.,Huang, Jianqi.,Han, Bo.,Xie, Chunyu.,Huang, Xiaoxiao.,...&Hou, Yanglong.(2020).Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties.ADVANCED SCIENCE,9.
MLA Li, Wei,et al."Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties".ADVANCED SCIENCE (2020):9.

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来源：金属研究所

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