The effect of finish layer on the interfacial cracking failure of Au-Si bonding
文献类型：期刊论文
| 作者 | Gao, Li-Yin1,3; Wen, Jian1,4; Li, Cai-Fu1,2; Chen, Chunhuan4; Liu, Zhi-Quan1,3 |
| 刊名 | ENGINEERING FAILURE ANALYSIS
 |
| 出版日期 | 2020-09-01 |
| 卷号 | 115页码:8 |
| 关键词 | AuSi bonding NiCo Intermetallic compounds (IMCs) Failure analysis Crack |
| ISSN号 | 1350-6307 |
| DOI | 10.1016/j.engfailanal.2020.104682 |
| 通讯作者 | Liu, Zhi-Quan(zqliu@siat.ac.cn) |
| 英文摘要 | The interfacial reliability of Au-Si bonding between Cu/MoCu/Cu (named as CPC) substrate and silicon chip is analyzed. The results of optical microscopy (OM) and conformal laser scanning microscopy (CLSM) revealed that the Au layer of the cracked sample has small roughness without any patterns on it. Furthermore, the results of scanning electron microscopy (SEM), electron back-scattered diffraction (EBSD) and electron probe micro-analysis (EPMA) demonstrated that the void or crack initiated at the interface between a thin intermetallic compound (IMC) layer and the NiCo layer. It showed that the cracked sample had higher Ni content within NiCo layer and smaller size of Au layer. Moreover, the IMCs were characterized using transmission electron microscopy (TEM), which were identified as bulk-like dispersed NiSi2 and a thin continuous (Ni,Co)(2)Si layer. Based on the experimental results, the failure mechanism of Au-Si bonding is concluded coming from the unbalanced diffusion rate between Ni and Si during interfacial re-action. Higher Ni content of NiCo layer and small grain size of Au and (Ni,Co)(2)Si layer accelerate the diffusion of Ni, which also promotes the growth of interfacial Ni-contained IMC. As a result, the vacancy flows diffuse inversely towards the interface and form voids along the interface, which leads to the final crack failure. |
| 资助项目 | National Key R&D Program of China[2017YFB0305700] |
| WOS研究方向 | Engineering ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000554882700004 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Key R&D Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/140015]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Zhi-Quan |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China 3.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China 4.Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Li-Yin,Wen, Jian,Li, Cai-Fu,et al. The effect of finish layer on the interfacial cracking failure of Au-Si bonding[J]. ENGINEERING FAILURE ANALYSIS,2020,115:8. |
| APA | Gao, Li-Yin,Wen, Jian,Li, Cai-Fu,Chen, Chunhuan,&Liu, Zhi-Quan.(2020).The effect of finish layer on the interfacial cracking failure of Au-Si bonding.ENGINEERING FAILURE ANALYSIS,115,8. |
| MLA | Gao, Li-Yin,et al."The effect of finish layer on the interfacial cracking failure of Au-Si bonding".ENGINEERING FAILURE ANALYSIS 115(2020):8. |
入库方式： OAI收割
来源：金属研究所
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