Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules
文献类型：期刊论文
| 作者 | Feng, Simin2; Tan, Junyang2; Zhao, Shilong2; Zhang, Shuqing2; Khan, Usman2; Tang, Lei2; Zou, Xiaolong2; Lin, Junhao3; Cheng, Hui-Ming1,2; Liu, Bilu2 |
| 刊名 | SMALL
 |
| 出版日期 | 2020-08-02 |
| 页码 | 9 |
| ISSN号 | 1613-6810 |
| 关键词 | 2D materials chemical vapor deposition molybdenum disulfide sulfur vacancy thiol molecules |
| DOI | 10.1002/smll.202003357 |
| 通讯作者 | Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) ; Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) |
| 英文摘要 | Monolayer transition metal dichalcogenides are 2D materials with many potential applications. Chemical vapor deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, thiol is proposed to be used as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS(2)grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS(2)and repair these defects during the growth of MoS2, resulting in high-quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications. |
| 资助项目 | NSFC[51722206] ; NSFC[51991340] ; NSFC[51991343] ; NSFC[51950410577] ; NSFC[11974156] ; NSFC[51920105002] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guandong International Science Collaboration Project[2019A050510001] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20190809180605522] ; Shenzhen Basic Research Project[JCYJ20170407155608882] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000554477300001 |
| 资助机构 | NSFC ; Guangdong Innovative and Entrepreneurial Research Team Program ; Guandong International Science Collaboration Project ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project |
| 源URL | [http://ir.imr.ac.cn/handle/321006/140034]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Cheng, Hui-Ming; Liu, Bilu |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst & Tsinghua Shenzh, Int Grad Sch, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Simin,Tan, Junyang,Zhao, Shilong,et al. Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules[J]. SMALL,2020:9. |
| APA | Feng, Simin.,Tan, Junyang.,Zhao, Shilong.,Zhang, Shuqing.,Khan, Usman.,...&Liu, Bilu.(2020).Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules.SMALL,9. |
| MLA | Feng, Simin,et al."Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules".SMALL (2020):9. |
入库方式： OAI收割
来源：金属研究所
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