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Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
文献类型：期刊论文
| 作者 | Hong, Yi-Lun2,4; Liu, Zhibo4; Wang, Lei2,4; Zhou, Tianya2,4; Ma, Wei2,4; Xu, Chuan4; Feng, Shun1,4; Chen, Long4; Chen, Mao-Lin2,4; Sun, Dong-Ming2,4 |
| 刊名 | SCIENCE
 |
| 出版日期 | 2020-08-07 |
| 卷号 | 369期号:6504页码:670-+ |
| ISSN号 | 0036-8075 |
| DOI | 10.1126/science.abb7023 |
| 通讯作者 | Ren, Wencai(wcren@limr.ac.cn) |
| 英文摘要 | Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals. |
| 资助项目 | National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51725103] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51671193] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; National Key R&D Program of the Ministry of Science and Technology of China[2016YFA0200101] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| 出版者 | AMER ASSOC ADVANCEMENT SCIENCE |
| WOS记录号 | WOS:000559184400041 |
| 资助机构 | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Key R&D Program of the Ministry of Science and Technology of China ; LiaoNing Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality |
| 源URL | [http://ir.imr.ac.cn/handle/321006/140174]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ren, Wencai |
| 作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+. |
| APA | Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+. |
| MLA | Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+. |
入库方式： OAI收割
来源：金属研究所
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