Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure
文献类型：期刊论文
| 作者 | Gao, Li-Yin2,3; Cui, Xian-Wei1; Tian, Fei-Fei4; Liu, Zhi-Quan2,3 |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2020-08-13 |
| 页码 | 9 |
| ISSN号 | 0361-5235 |
| 关键词 | Mixed soldering ball grid array solidification crack shrinkage failure mechanism |
| DOI | 10.1007/s11664-020-08372-8 |
| 通讯作者 | Liu, Zhi-Quan(zqliu@siat.ac.cn) |
| 英文摘要 | In this study, the influence of different reflow profiles and dosages of SnPb solder paste on the reliability of the SnAgCu/SnPb mixed assembly process was investigated. The interfacial microstructures were carefully examined through scanning electron microscopy, and two failures modes were found. Firstly, when reflowed at 245 degrees C for 95 s, Pb-rich phases were buried within an intermetallic compound (IMC) layer and led to micro-voids and cracks under thermal stress or mechanical stress. However, upon increasing the reflow temperature or time further led to melting the solder ball totally, and the Pb element dissolved into a liquid phase and precipitated into uniform and small granules during the cooling process. Further, among the samples with different dosages of SnPb solder paste, severe shrinkage occurred at the solder joints with the addition of 12 wt.% eutectic SnPb component. Electron back-scattered diffraction analysis was conducted in order to determine the mechanism of different shrinkages. The solder ball consisted of several primary Sn grains, and the shrinkage and Pb-rich phase are preferred to appear at the grain boundary. When the solder ball consisted of a single grain, no preferred orientation of the shrinkage and Pb-rich phase were detected. The shrinkage appeared at the final solidification region, which is near the IMC layer. Moreover, the shrinkages connect to each other, and a continuous crack formed on the chip side, leading to the failure. |
| 资助项目 | NaUNCORRECTED tional Key R&D Program of China[2017YFB0305700] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | SPRINGER |
| WOS记录号 | WOS:000559506500003 |
| 资助机构 | NaUNCORRECTED tional Key R&D Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/140222]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Zhi-Quan |
| 作者单位 | 1.Jiangyin Changdian Adv Packaging Co Ltd, Jiangyin 214431, Peoples R China 2.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 4.Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,et al. Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure[J]. JOURNAL OF ELECTRONIC MATERIALS,2020:9. |
| APA | Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,&Liu, Zhi-Quan.(2020).Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure.JOURNAL OF ELECTRONIC MATERIALS,9. |
| MLA | Gao, Li-Yin,et al."Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure".JOURNAL OF ELECTRONIC MATERIALS (2020):9. |
入库方式： OAI收割
来源：金属研究所
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