Flexoelectricity-induced retention failure in ferroelectric films
文献类型：期刊论文
| 作者 | Zou, M. J.1,4; Tang, Y. L.1; Zhu, Y. L.1; Wang, Y. J.1; Feng, Y. P.1,3; Han, M. J.1,3; Zhang, N. B.1,4; Ma, J. Y.1,2,4; Geng, W. R.1,4; Hu, W. T.1,4 |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2020-09-01 |
| 卷号 | 196页码:61-68 |
| ISSN号 | 1359-6454 |
| 关键词 | Ferroelectrics Flexoelectricity Retention failure Strain gradient |
| DOI | 10.1016/j.actamat.2020.06.037 |
| 通讯作者 | Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn) |
| 英文摘要 | Retention failure is deleterious on ferroelectric domain stability, resulting in data loss in ferroelectric memories. However, the understanding of the origin of retention failure remains a challenge for the lack of a direct experimental evidence. Here, using a combination of piezoelectric force microscopy, atomic-scale scanning transmission electron microscopy and reciprocal space mapping, we report that the polarization retention failure is caused by a strain gradient induced flexoelectric field in tetragonal ferroelectric films. Atomic imaging reveals that the strain gradient is introduced by tensile strains, which is resultant from the vertically distributed Pb-rich anti-phase domains. This strain gradient couples with polarizations and results in flexoelectric fields in the films, leading to the retention failure in the films. Our study directly underlines the atomic mechanisms behind the strain gradient induced macroscopic retention failure behavior and clarifies the effect of local strain state on domain relaxation processes, thus can shed light on further understanding and improving the retention properties of oxide ferroelectrics. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 资助项目 | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51922100] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000557651000007 |
| 资助机构 | Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/140246]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhu, Y. L.; Ma, X. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China 2.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou, M. J.,Tang, Y. L.,Zhu, Y. L.,et al. Flexoelectricity-induced retention failure in ferroelectric films[J]. ACTA MATERIALIA,2020,196:61-68. |
| APA | Zou, M. J..,Tang, Y. L..,Zhu, Y. L..,Wang, Y. J..,Feng, Y. P..,...&Ma, X. L..(2020).Flexoelectricity-induced retention failure in ferroelectric films.ACTA MATERIALIA,196,61-68. |
| MLA | Zou, M. J.,et al."Flexoelectricity-induced retention failure in ferroelectric films".ACTA MATERIALIA 196(2020):61-68. |
入库方式： OAI收割
来源：金属研究所
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