The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering
文献类型：期刊论文
| 作者 | Liu, Zhi-Quan1,2,5; Meng, Zhi-Chao1,5; Wu, Di5; Shang, Zhengang4; He, Xin3; Xiong, Xiaodong3 |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2020-10-01 |
| 卷号 | 113页码:6 |
| 关键词 | Co sputtering target Soldering assembly Interface IMC Growth mechanism |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2020.113906 |
| 通讯作者 | Liu, Zhi-Quan(zqliu@siat.ac.an) |
| 英文摘要 | Large target is essential for the fabrication of semiconductor devices, and the reliability of sputtering target backplate assembly plays a key role on the quality of sputtered films in the devices. In this work, the interface of an 8-inch Co target soldered on Cu backplate by In alloy is studied and characterized systematically. At the Cu backplate side, there are many void defects, and only one kind of intermetallic compound (IMC), namely Cu11In9, was observed after soldering. This Cu11In9 layer consists of two sublayers, which were formed at different reaction stage during soldering. At the Co target side, the voids are small, and the formed IMC is Ni28In72 phase. There is a thin Ni(V) layer at the Co side, and the V element is concentrated and stable at the interface, while Co will diffuse into Ni(V) layer to form a solid solution. The interfacial reaction and IMC formation related mechanisms are discussed, which can provide guidance for the design and fabrication of large-scale sputtering target assembly in microelectronic industry. |
| 资助项目 | National Key Research and Development Program of China[2017YFB0305501] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000579082400008 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Key Research and Development Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/141050]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Zhi-Quan |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 3.GRIKIN Adv Mat Co Ltd, Beijing 102200, Peoples R China 4.Cent South Univ, Adv Res Ctr, Changsha 410083, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,et al. The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering[J]. MICROELECTRONICS RELIABILITY,2020,113:6. |
| APA | Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,Shang, Zhengang,He, Xin,&Xiong, Xiaodong.(2020).The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering.MICROELECTRONICS RELIABILITY,113,6. |
| MLA | Liu, Zhi-Quan,et al."The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering".MICROELECTRONICS RELIABILITY 113(2020):6. |
入库方式： OAI收割
来源：金属研究所
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