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Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor

文献类型：期刊论文

作者Shao, Gonglei2; Lu, Yizhen3; Hong, Jinhua4; Xue, Xiong-Xiong1,5; Huang, Jinqiang6,7; Xu, Zheyuan8; Lu, Xiangchao3; Jin, Yuanyuan2; Liu, Xiao2; Li, Huimin2
刊名ADVANCED SCIENCE
出版日期2020-11-16
卷号7期号:24页码:8
关键词chemical vapor deposition covalent bonds heteroatom doping metal– semiconductor heterostructures photoelectrocatalytic performance
DOI10.1002/advs.202002172
通讯作者Pan, Anlian(anlian.pan@hnu.edu.cn) ; Lin, Yung-Chang(yc-lin@aist.go.jp) ; Cao, Yang(yangcao@xmu.edu.cn) ; Liu, Song(liusong@hnu.edu.cn)
英文摘要Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S SnxMo1-xS2/MoS2 heterostructure is precisely prepared with in situ growth of metallic SnxMo1-xS2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M-S heterostructure is 2.5 times higher than that of pure MoS2 in microreactor, attributed to the efficient electron-hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M-S lateral heterostructures by controllable doping heteroatoms. The M-S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system.
资助项目National Key R&D Program of China[2018YFA0209500] ; National Key R&D Program of China[2018YFA0306900] ; National Natural Science Foundation of China[11974105] ; National Natural Science Foundation of China[21975067] ; National Natural Science Foundation of China[21705036] ; National Natural Science Foundation of China[21872114] ; National Natural Science Foundation of China[U19A2090] ; National Natural Science Foundation of China[51525202] ; Natural Science Foundation of Hunan Province, China[2018JJ3035] ; Fundamental Research Funds for the Central Universities from Hunan University ; JSPS-KAKENHI[JP16H06333] ; JSPS-KAKENHI[18K14119] ; National Basic Research Programs of China[2016YFA0300901]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
出版者WILEY
WOS记录号WOS:000590295000001
资助机构National Key R&D Program of China ; National Natural Science Foundation of China ; Natural Science Foundation of Hunan Province, China ; Fundamental Research Funds for the Central Universities from Hunan University ; JSPS-KAKENHI ; National Basic Research Programs of China
源URL[http://ir.imr.ac.cn/handle/321006/141356]  
专题金属研究所_中国科学院金属研究所
通讯作者Pan, Anlian; Lin, Yung-Chang; Cao, Yang; Liu, Song
作者单位1.Hunan Univ, Sch Phys & Elect, Hunan Prov Key Lab Low Dimens Struct Phys & Devic, Changsha 410082, Peoples R China
2.Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Inst Chem Biol & Nanomed ICBN, Changsha 410082, Peoples R China
3.Xiamen Univ, Coll Chem & Chem Engn, Collaborat Innovat Ctr Chem Energy Mat IChEM, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
4.Natl Inst Adv Ind Sci & Technol, Nanomat Res Inst, Tsukuba, Ibaraki 3058565, Japan
5.Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Peoples R China
6.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
7.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
8.Hunan Univ, Coll Mat Sci & Engn, State Key Lab Chemo Biosensing & Chemometr, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China
9.Hunan Univ, Sch Phys & Elect, Changsha 410082, Peoples R China
10.Natl Inst Mat Sci NIMS, Int Ctr Young Scientists ICYS, Tsukuba, Ibaraki 3050044, Japan
推荐引用方式
GB/T 7714		 Shao, Gonglei,Lu, Yizhen,Hong, Jinhua,et al. Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor[J]. ADVANCED SCIENCE,2020,7(24):8.
APA Shao, Gonglei.,Lu, Yizhen.,Hong, Jinhua.,Xue, Xiong-Xiong.,Huang, Jinqiang.,...&Liu, Song.(2020).Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor.ADVANCED SCIENCE,7(24),8.
MLA Shao, Gonglei,et al."Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor".ADVANCED SCIENCE 7.24(2020):8.

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