Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse
文献类型：期刊论文
| 作者 | Zhang, Xinglai1; Li, Jing1; Ma, Zongyi1; Zhang, Jian1; Leng, Bing2; Liu, Baodan1 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2020-10-21 |
| 卷号 | 12期号:42页码:47721-47728 |
| 关键词 | MoS2 GaN two dimension van der Waals heterostructure photodetectors |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.0c11021 |
| 通讯作者 | Liu, Baodan(baodanliu@hotmail.com) |
| 英文摘要 | Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p-n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices. |
| 资助项目 | Shenyang Science and Technology Program[18-013-0-52] ; National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Shenyang National Laboratory for Materials Science[L2019F36] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2019197] ; Liaoning Province Natural Science Fund Program[2019-MS-333] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000584489800056 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | Shenyang Science and Technology Program ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; Liaoning Province Natural Science Fund Program |
| 源URL | [http://ir.imr.ac.cn/handle/321006/141474]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Baodan |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, Shenyang 110001, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xinglai,Li, Jing,Ma, Zongyi,et al. Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(42):47721-47728. |
| APA | Zhang, Xinglai,Li, Jing,Ma, Zongyi,Zhang, Jian,Leng, Bing,&Liu, Baodan.(2020).Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse.ACS APPLIED MATERIALS & INTERFACES,12(42),47721-47728. |
| MLA | Zhang, Xinglai,et al."Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse".ACS APPLIED MATERIALS & INTERFACES 12.42(2020):47721-47728. |
入库方式： OAI收割
来源：金属研究所
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