Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts
文献类型：期刊论文
| 作者 | Zhang Y(张也)1; Guo HH(郭怀红)1; Dong BJ(董宝娟)2; Zhu Z(朱震)5; Yang T(杨腾)2; Wang JZ(王吉章)2; Zhang ZD(张志东)2 |
| 刊名 | 中国物理B:英文版
 |
| 出版日期 | 2020 |
| 卷号 | 29.0期号:003页码:41-49 |
| 关键词 | tailoring electronic properties two-dimensional antimonene isoelectronic counterparts |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/ab6c4e |
| 英文摘要 | Using ab initio density functional theory calculations, we explore the three most stable structural phases, namely, α,β, and cubic(c) phases, of two-dimensional(2D) antimonene, as well as its isoelectronic counterparts SnTe and InI. We find that the band gap increases monotonically from Sb to SnTe to InI along with an increase in ionicity, independent of the structural phases. The band gaps of this material family cover the entire visible-light energy spectrum, ranging from 0.26 eV to 3.37 eV, rendering them promising candidates for optoelectronic applications. Meanwhile, band-edge positions of these materials are explored and all three types of band alignments can be achieved through properly combining antimonene with its isoelectronic counterparts to form heterostructures. The richness in electronic properties for this isoelectronic material family sheds light on possibilities to tailor the fundamental band gap of antimonene via lateral alloying or forming vertical heterostructures. |
| 资助项目 | [National Natural Science Foundation of China] ; [College Students' Innovation and Entrepreneurship Projects, China] ; [Liaoning Province Doctor Startup Fund, China] |
| 语种 | 中文 |
| CSCD记录号 | CSCD:6721102 |
| WOS记录号 | WOS:000521194200001 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/146112]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.College of Sciences,Liaoning Shihua University 2.中国科学院金属研究所 3.State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Opto-Electronics,Shanxi University 4.Collaborative Innovation Center of Extreme Optics,Shanxi University 5.Materials Department,University of California,Santa Barbara,USA |
| 推荐引用方式 GB/T 7714 | Zhang Y,Guo HH,Dong BJ,et al. Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts[J]. 中国物理B:英文版,2020,29.0(003):41-49. |
| APA | 张也.,郭怀红.,董宝娟.,朱震.,杨腾.,...&张志东.(2020).Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts.中国物理B:英文版,29.0(003),41-49. |
| MLA | 张也,et al."Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts".中国物理B:英文版 29.0.003(2020):41-49. |
入库方式： OAI收割
来源：金属研究所
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