Silver-Assisted Chemical Etching of Semiconductor Materials
文献类型：期刊论文
| 作者 | Geng Xuewen1; He Chunlin2; Xu Shichong1; Li Jungang1; Zhu Lijuan2; Zhao Liancheng1 |
| 刊名 | PROGRESS IN CHEMISTRY
 |
| 出版日期 | 2012 |
| 卷号 | 24期号:10页码:1955-1965 |
| 关键词 | SILICON SOLAR-CELLS CONCENTRATED HYDROGEN PEROXIDE AQUEOUS FLUORIDE SOLUTION MULTICRYSTALLINE SILICON POROUS SILICON NANOWIRE ARRAYS SI NANOWIRES CATALYTIC DECOMPOSITION ORDERED ARRAYS FABRICATION silver chemical etching semiconductors |
| ISSN号 | 1005-281X |
| 其他题名 | Silver-Assisted Chemical Etching of Semiconductor Materials |
| 英文摘要 | Semiconductors with various structural morphologies are widely used in areas of electronics, optoelectronics, photovoltaics, sensors and thermoelectrics. The fabrication of solid-state micro/nanostructures has been motivated by the miniaturization and multi-functionality of microelectronic devices. Although some traditional methods can be used for texturization treatment of semiconductors, their applications are limited to some extent owing to their intrinsic disadvantages. Recently, the technologies of noble metal-assisted chemical etching (MacEtch) of semiconductors to produce micro/nanostructures have been paid much attention due to their relatively simple processes, fast reacting rate, low cost, and applicability for mass production etc. In this review, firstly, the MacEtch mechanisms, reaction phenomena and effect factors ( including the depositing methods, distribution, sizes, shape of Ag particles, and the composition of etchants) of Ag-assisted chemical etching of Si semiconductor are discussed in detail. And then the fabrication technologies of various microstructures such as porous Si, Si nanostructures, silicon nanowire arrays, and quasi-ordered micro/nanostructures are introduced to highlight the salient features of MacEtch of Si, and the state-of-the-art MacEtch of other semiconductors such as Ge, Si1-xGex, and GaAs is also summarized. Meantime, the potential applications of the MacEtch of semiconductors in different fields are overviewed. Finally, the current issues are analyzed and the outlook for the further research in this field is proposed. |
| 语种 | 英语 |
| CSCD记录号 | CSCD:4645318 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/146472]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Harbin Institute Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China 2.中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Geng Xuewen,He Chunlin,Xu Shichong,et al. Silver-Assisted Chemical Etching of Semiconductor Materials[J]. PROGRESS IN CHEMISTRY,2012,24(10):1955-1965. |
| APA | Geng Xuewen,He Chunlin,Xu Shichong,Li Jungang,Zhu Lijuan,&Zhao Liancheng.(2012).Silver-Assisted Chemical Etching of Semiconductor Materials.PROGRESS IN CHEMISTRY,24(10),1955-1965. |
| MLA | Geng Xuewen,et al."Silver-Assisted Chemical Etching of Semiconductor Materials".PROGRESS IN CHEMISTRY 24.10(2012):1955-1965. |
入库方式： OAI收割
来源：金属研究所
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