Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD
文献类型：期刊论文
| 作者 | Qin Fuwen1; Zhang Dong1; Bai Yizhen1; Ju Zhenhe3; Li Shuangmei3; Li Yucai3; Pang Jiaqi1; Bian Jiming1 |
| 刊名 | RARE METALS
 |
| 出版日期 | 2012 |
| 卷号 | 31期号:2页码:150-153 |
| 关键词 | MOLECULAR-BEAM EPITAXY GROWTH InN films ECR-PEMOCVD sapphire substrates semiconductor devices |
| ISSN号 | 1001-0521 |
| 其他题名 | Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD |
| 英文摘要 | InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material. |
| 资助项目 | [National Natural Science Foundation of China] ; [Fundamental Research Funds for the Central Universities] ; [Science and Technology Foundation for Higher Education of Liaoning Province, China] ; [Science and Technology Innovation Project Foundation for Higher Education School] |
| 语种 | 英语 |
| CSCD记录号 | CSCD:4493794 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/147896]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.大连大学 2.大连理工大学 3.中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Qin Fuwen,Zhang Dong,Bai Yizhen,et al. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD[J]. RARE METALS,2012,31(2):150-153. |
| APA | Qin Fuwen.,Zhang Dong.,Bai Yizhen.,Ju Zhenhe.,Li Shuangmei.,...&Bian Jiming.(2012).Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD.RARE METALS,31(2),150-153. |
| MLA | Qin Fuwen,et al."Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD".RARE METALS 31.2(2012):150-153. |
入库方式： OAI收割
来源：金属研究所
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