Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature
文献类型:期刊论文
作者 | Ji XiaoRui; Yang XiaoHong |
刊名 | CHINESE PHYSICS LETTERS
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出版日期 | 2012 |
卷号 | 29期号:3 |
关键词 | CUBIC BORON-NITRIDE SINGLE-CRYSTAL SYSTEM NUCLEATION |
ISSN号 | 0256-307X |
其他题名 | Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature |
英文摘要 | The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N-B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N-B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal. |
语种 | 英语 |
CSCD记录号 | CSCD:4466349 |
源URL | [http://ir.imr.ac.cn/handle/321006/148235] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
作者单位 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Ji XiaoRui,Yang XiaoHong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. CHINESE PHYSICS LETTERS,2012,29(3). |
APA | Ji XiaoRui,&Yang XiaoHong.(2012).Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature.CHINESE PHYSICS LETTERS,29(3). |
MLA | Ji XiaoRui,et al."Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature".CHINESE PHYSICS LETTERS 29.3(2012). |
入库方式: OAI收割
来源:金属研究所
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