Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate
文献类型：期刊论文
| 作者 | Sun FuLong3; Gao LiYin3; Liu ZhiQuan3; Zhang Hao1; Sugahara Tohru1; Nagao Shijo1; Suganuma Katsuaki1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2018 |
| 卷号 | 34期号:10页码:1885-1890 |
| 关键词 | NI SOLDER JOINTS NANO-SCALE TWINS INTERFACIAL RELIABILITY FE-NI COPPER METALS DEFORMATION STRENGTH DEPENDENCE BOUNDARIES Electrodeposition Nanotwinned Cu Growth mechanism Acid adsorption |
| ISSN号 | 1005-0302 |
| 英文摘要 | Homogeneous columnar Cu film with fully embedded nanotwins was successfully fabricated on Ti/Cu seed layer on silicon wafer. The nanotwins with thickness of tens of nanometers are generally parallel to the silicon surface, showing a strong (111) preferred orientation. The acid concentration was found to be important in influencing the formation of nanoscale twins. By adjusting the acid concentration, the nanotwins can be induced from the top columnar grain to middle columnar grain and reach the bottom equiaxed grain, and a microstructural transformation model was given. A theory focusing on the cathode overpotential was proposed to reveal the effect of acid concentration on the growth mechanism of nanoscale twins. An appropriate adsorption proportion of hydrogen on cathode (acid concentration 17 ml L-1) could increase the overpotential which supplies adequate nucleation energy for nanoscale twins formation. (C) 2018 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | [National Natural Science Foundation of China] ; [Osaka University Visiting Scholar Program] |
| 语种 | 英语 |
| CSCD记录号 | CSCD:6335120 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/153292]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Osaka Univ, Institute Sci & Ind Res, Osaka 5670047, Japan 2.中国科学院大学 3.中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Sun FuLong,Gao LiYin,Liu ZhiQuan,et al. Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(10):1885-1890. |
| APA | Sun FuLong.,Gao LiYin.,Liu ZhiQuan.,Zhang Hao.,Sugahara Tohru.,...&Suganuma Katsuaki.(2018).Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(10),1885-1890. |
| MLA | Sun FuLong,et al."Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.10(2018):1885-1890. |
入库方式： OAI收割
来源：金属研究所
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