Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method
文献类型：期刊论文
| 作者 | Yang, Bing2; Li, Haining1,2; Yu, Biao1,2; Lu, Jiaqi1,2; Huang, Nan2; Liu, Lusheng2; Jiang, Xin2,3 |
| 刊名 | CARBON
 |
| 出版日期 | 2021 |
| 卷号 | 171页码:455-463 |
| ISSN号 | 0008-6223 |
| 关键词 | Color center Diamond film Photo-luminescence Silicon carbide Chemical vapor deposition |
| DOI | 10.1016/j.carbon.2020.09.032 |
| 通讯作者 | Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | SiC is always produced forming diamond/SiC composite films owing to the oversaturated doping of Si atoms during the preparation of high emission SiV centers. As a higher refractive index material (n = 2.72), the presence of SiC could possibly lead to inefficient photo-luminescent (PL) collection of SiV centers with total internal reflection. In order to understand such effect, different diamond/SiC films were deposited in a 915 MHz microwave plasma CVD (MPCVD) using the reactive gas of tetramethylsilane (TMS). The microstructure and photoluminescence of SiV centers were systematically investigated. It is found that the addition of TMS gas leads to the formation of cubic beta-SiC and the refinement of diamond crystals. At the TMS gas flow of 5 sccm, the concentration of beta-SiC is about 10% and the average diamond size is about 98 nm. The film exhibits the optimized PL emission of SiV centers, with the ratio of SiV PL to diamond Raman peak being 21.4. Increasing TMS gas flow leads to the increase of the concentration of beta-SiC and the deterioration of PL emission of SiV centers. These results reveal that the introduction of TMS gas at a low flow advances the formation of diamond/SiC film containing high-brightness SiV centers. (C) 2020 Published by Elsevier Ltd. |
| 资助项目 | National Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[Y931L90381] |
| WOS研究方向 | Chemistry ; Materials Science |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000598371500049 |
| 资助机构 | National Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/158804]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Bing; Jiang, Xin |
| 作者单位 | 1.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany |
| 推荐引用方式 GB/T 7714 | Yang, Bing,Li, Haining,Yu, Biao,et al. Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method[J]. CARBON,2021,171:455-463. |
| APA | Yang, Bing.,Li, Haining.,Yu, Biao.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method.CARBON,171,455-463. |
| MLA | Yang, Bing,et al."Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method".CARBON 171(2021):455-463. |
入库方式： OAI收割
来源：金属研究所
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