Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4
文献类型：期刊论文
| 作者 | Guo, San-Dong2; Mu, Wen-Qi2; Zhu, Yu-Tong2; Chen, Xing-Qiu1,3 |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2020-12-28 |
| 卷号 | 22期号:48页码:28359-28364 |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/d0cp05273f |
| 通讯作者 | Guo, San-Dong(sandongyuwang@163.com) |
| 英文摘要 | The septuple-atomic-layer VSi2P4 with the same structure of experimentally synthesized MoSi2N4 is predicted to be a spin-gapless semiconductor (SGS) with the generalized gradient approximation (GGA). In this work, the biaxial strain is applied to tune the electronic properties of VSi2P4, and it spans a wide range of properties upon increasing the strain from a ferromagnetic metal (FMM) to SGS to a ferromagnetic semiconductor (FMS) to SGS to a ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS VSi2P4 with the strain range of 0% to 4%. The calculated piezoelectric strain coefficients d(11) for 1%, 2% and 3% strains are 4.61 pm V-1, 4.94 pm V-1 and 5.27 pm V-1, respectively, which are greater than or close to a typical value of 5 pm V-1 for bulk piezoelectric materials. Finally, similar to VSi2P4, the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the VSi2N4 monolayer. Our works show that VSi2P4 in the FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices. |
| 资助项目 | Natural Science Foundation of Shaanxi Provincial Department of Education[19JK0809] ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT) |
| WOS研究方向 | Chemistry ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| WOS记录号 | WOS:000603167900040 |
| 资助机构 | Natural Science Foundation of Shaanxi Provincial Department of Education ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/158933]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guo, San-Dong |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Xian Univ Pasts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, San-Dong,Mu, Wen-Qi,Zhu, Yu-Tong,et al. Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2020,22(48):28359-28364. |
| APA | Guo, San-Dong,Mu, Wen-Qi,Zhu, Yu-Tong,&Chen, Xing-Qiu.(2020).Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,22(48),28359-28364. |
| MLA | Guo, San-Dong,et al."Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 22.48(2020):28359-28364. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。