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High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

文献类型：期刊论文

作者Aziz, Tariq1,2; Wei, Shijing1,2,3; Sun, Yun1,4; Ma, Lai-Peng1,4; Pei, Songfeng1,4; Dong, Shichao1,4; Ren, Wencai1,4; Liu, Qi5; Cheng, Hui-Ming1,2,6; Sun, Dong-Ming1,4
刊名NANOSCALE
出版日期2021-01-28
卷号13期号:4页码:2448-2455
ISSN号2040-3364
DOI10.1039/d0nr07888c
通讯作者Ma, Lai-Peng(lpma@imr.ac.cn) ; Liu, Qi(qi_liu@fudan.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
英文摘要The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its redox reaction with an active metal electrode, so the obtained RRAMs are typically plagued by inferior performance and reliability. Here, we report a strategy to develop high-performance flexible RRAMs by using graphene oxidized with a perpendicular oxidation gradient as the resistive layer. In contrast to a homogeneous oxide, this graphene together with its distinctive inter-layer oxygen diffusion path enables excellent oxygen ion/vacancy diffusion. Without an interfacial redox reaction, oxygen ions can diffuse to form conductive filaments with two inert metal electrodes by applying a bias voltage. Compared with state-of-the-art graphene oxide RRAMs, these graphene RRAMs have shown superior performance including a high on-off current ratio of similar to 10(5), long-term retention of similar to 10(6) s, reproducibility over 10(4) cycles and long-term flexibility at a bending strain of 0.6%, indicating that the material has great potential in wearable smart data-storage devices.
资助项目National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51502304] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Liaoning Revitalization Talents Program[XLYC1807109] ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China[2016YFB0401104] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[L2019F28] ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[SKLA-2019-03]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000614867500024
资助机构National Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/159081]  
专题金属研究所_中国科学院金属研究所
通讯作者Ma, Lai-Peng; Liu, Qi; Sun, Dong-Ming
作者单位1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
3.Henan Univ, Key Lab Photovolta Mat, 1 Jinming Rd, Kalfeng 475004, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
5.Fudan Univ, Frontier Inst Chip & Syst, 2005 Shonghu Rd, Shanghai 200433, Peoples R China
6.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714		 Aziz, Tariq,Wei, Shijing,Sun, Yun,et al. High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient[J]. NANOSCALE,2021,13(4):2448-2455.
APA Aziz, Tariq.,Wei, Shijing.,Sun, Yun.,Ma, Lai-Peng.,Pei, Songfeng.,...&Sun, Dong-Ming.(2021).High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient.NANOSCALE,13(4),2448-2455.
MLA Aziz, Tariq,et al."High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient".NANOSCALE 13.4(2021):2448-2455.

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来源：金属研究所

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