Intrinsic piezoelectricity in monolayer MSi2N4 (M = Mo, W, Cr, Ti, Zr and Hf)
文献类型：期刊论文
| 作者 | Guo, San-Dong1,2; Zhu, Yu-Tong1; Mu, Wen-Qi1; Ren, Wen-Cai3,4 |
| 刊名 | EPL
 |
| 出版日期 | 2020-12-01 |
| 卷号 | 132期号:5页码:6 |
| 关键词 | 71 20 -b 77 65 -j |
| ISSN号 | 0295-5075 |
| DOI | 10.1209/0295-5075/132/57002 |
| 通讯作者 | Guo, San-Dong(sandongyuwang@163.com) |
| 英文摘要 | Motived by experimentally synthesized (Hong Y. L. et al., Science, 369 (2020) 670), the intrinsic piezoelectricity in monolayer ( , W, Cr, Ti, Zr and Hf) are studied by density functional theory (DFT). Among the six monolayers, has the best piezoelectric strain coefficient d(11) of 1.24 pm/V, and the second is 1.15 pm/V for . Taking as a example, strain engineering is applied to improve d(11). It is found that tensile biaxial strain can enhance d(11) of , and the d(11) at 4% strain can improve by 107% with respect to the unstrained one. By replacing the N by P or As in , the d(11) can be raised substantially. For and , the d(11) is as high as 4.93 pm/V and 6.23 pm/V, which is mainly due to smaller and very small minus or positive ionic contribution to piezoelectric stress coefficient e(11) with respect to . The discovery of this piezoelectricity in monolayer enables active sensing, actuating and new electronic components for nanoscale devices, and is recommended for experimental exploration. |
| 资助项目 | Natural Science Foundation of Shaanxi Provincial Department of Education[19JK0809] ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT) |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000614620700002 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | Natural Science Foundation of Shaanxi Provincial Department of Education ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/159111]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guo, San-Dong |
| 作者单位 | 1.Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China 2.Xian Univ Posts & Telecommun, Key Lab Adv Semicond Devices & Mat, Xian 710121, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,et al. Intrinsic piezoelectricity in monolayer MSi2N4 (M = Mo, W, Cr, Ti, Zr and Hf)[J]. EPL,2020,132(5):6. |
| APA | Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,&Ren, Wen-Cai.(2020).Intrinsic piezoelectricity in monolayer MSi2N4 (M = Mo, W, Cr, Ti, Zr and Hf).EPL,132(5),6. |
| MLA | Guo, San-Dong,et al."Intrinsic piezoelectricity in monolayer MSi2N4 (M = Mo, W, Cr, Ti, Zr and Hf)".EPL 132.5(2020):6. |
入库方式： OAI收割
来源：金属研究所
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