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Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

文献类型：期刊论文

作者Guo, Jingrui1,2,3,4; Zhao, Ying1,2,3,4; Yang, Guanhua1,2,3,4; Chuai, Xichen1,2,3,4; Lu, Wenhao1,2,3,4; Liu, Dongyang1,2,3,4; Chen, Qian1,2,3,4; Duan, Xinlv1,2,3,4; Huang, Shijie1,2,3,4; Su, Yue1,2,3,4
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
出版日期2021-04-01
卷号68期号:4页码:2049-2055
关键词Electric potential Solid modeling Logic gates Integrated circuit modeling Numerical models Thin film transistors Analytical models Analytical models independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) Schroder method surface potential threshold compensation effect
ISSN号0018-9383
DOI10.1109/TED.2021.3054359
英文摘要A surface potential-based compact model for independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) is proposed here. The transport theories of percolation conduction, trap-limited conduction (TLC), and variable range hopping (VRH) in extended and localized states are first considered simultaneously via Schroder method, obtaining a physical description of the transport mechanism under different conditions of temperature and gate voltage. Moreover, a single formulation of front and back surface potentials which is valid and extremely accurate in all operation regimes is developed. Based on the transport theories and surface potentials, the complete compact model is developed and verified using both numerical simulation and experiment with an excellent agreement, and the threshold compensation effect is also included. Finally, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment, which suggested that the proposed model can be successfully applied to circuit design.
资助项目National key research and development program[2017YFB0701703] ; National key research and development program[2018YFA0208503] ; National key research and development program[2016YFA0201802] ; Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences ; National Natural Science Foundation of China[61725404] ; National Natural Science Foundation of China[61890944] ; National Natural Science Foundation of China[61874134] ; National Natural Science Foundation of China[61804170] ; National Natural Science Foundation of China[61821091] ; National Natural Science Foundation of China[61888102] ; National Natural Science Foundation of China[61720106013] ; National Natural Science Foundation of China[61904195] ; National Natural Science Foundation of China[61404164] ; Beijing Training Project for the Leading Talents in ST[Z151100000315008] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030000] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030300]
WOS研究方向Engineering ; Physics
语种英语
WOS记录号WOS:000633331000101
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/58393]  
专题中国科学院数学与系统科学研究院
通讯作者Li, Ling; Liu, Ming
作者单位1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
2.Univ Chinese Acad Sci, Sch Microelect, Beijing, Peoples R China
3.Chinese Acad Sci, Acad Math & Syst Sci, LSEC, NCMIS, Beijing 100190, Peoples R China
4.Kyung Hee Univ, Seoul 02447, South Korea
推荐引用方式
GB/T 7714		 Guo, Jingrui,Zhao, Ying,Yang, Guanhua,et al. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(4):2049-2055.
APA Guo, Jingrui.,Zhao, Ying.,Yang, Guanhua.,Chuai, Xichen.,Lu, Wenhao.,...&Liu, Ming.(2021).Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT.IEEE TRANSACTIONS ON ELECTRON DEVICES,68(4),2049-2055.
MLA Guo, Jingrui,et al."Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT".IEEE TRANSACTIONS ON ELECTRON DEVICES 68.4(2021):2049-2055.

入库方式： OAI收割

来源：数学与系统科学研究院

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