Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
文献类型：期刊论文
| 作者 | Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ] ; Wen, L (Wen, Lin)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Cai, YL (Cai, Yulong)[ 1,2,3 ]; Fu, J (Fu, Jing)[ 1,2,3 ]; Chen, JW (Chen, Jiawei)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
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| 刊名 | RESULTS IN PHYSICS
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| 出版日期 | 2020 |
| 卷号 | 19期号:12页码:1-7 |
| 关键词 | Backside illuminated CMOS image sensor Random telegraph signal Radiation effects Proton irradiation Theoretical calculation |
| ISSN号 | 2211-3797 |
| DOI | 10.1016/j.rinp.2020.103443 |
| 英文摘要 | The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-mu m backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively. After exposure to protons, the radiation-induced variations of the number of RTS pixels, the number of RTS levels and transition maximum amplitude are analyzed. The effect of proton energy on RTS occurrence probability is studied using two types of theoretical models. Furthermore, DC-RTS dependence on the epitaxial layer thickness of the sensors is discussed, showing that there is no significant difference for DC-RTS phenomenon in different epitaxial layers. |
| WOS记录号 | WOS:000604218600004 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/7786]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 固体辐射物理研究室 |
| 通讯作者 | Li, YD (Li, Yudong)[ 1,2 ] |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2. Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, BK ,Li, YD ,Wen, L ,et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors[J]. RESULTS IN PHYSICS,2020,19(12):1-7. |
| APA | Liu, BK .,Li, YD .,Wen, L .,Zhou, D .,Feng, J .,...&Guo, Q .(2020).Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors.RESULTS IN PHYSICS,19(12),1-7. |
| MLA | Liu, BK ,et al."Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors".RESULTS IN PHYSICS 19.12(2020):1-7. |
入库方式： OAI收割
来源：新疆理化技术研究所
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