Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection
文献类型：期刊论文
| 作者 | Guo,Yanan2; Liu,Dong2,3; Miao,Chengcheng2,3; Sun,Jiamin2,3; Pang,Zhiyong2; Wang,Peng4; Xu,Mingsheng2; Han,Ning1; Yang,Zai-Xing2,3 |
| 刊名 | Nanotechnology
 |
| 出版日期 | 2021-01-13 |
| 卷号 | 32期号:14 |
| 关键词 | ambipolar transport field-effect transistors InGaAs nanowires CMOS-compatible catalyst surface state near-infrared photodetection |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/1361-6528/abd358 |
| 英文摘要 | Abstract Weak n-type characteristics or poor p-type characteristics are limiting the applications of binary semiconductors based on ambipolar field-effect transistors (FETs). In this work, a ternary alloy of In0.2Ga0.8As nanowires (NWs) is successfully prepared using a Ni catalyst during a typical solid-source chemical-vapor-deposition process to balance the weak n-type conduction behavior in ambipolar GaAs NWFETs and the poor p-type conduction behavior in ambipolar InAs NWFETs. The presence of ambipolar transport, contributed by a native oxide shell and the body defects of the prepared In0.2Ga0.8As NWs, is confirmed by the constructed back-gated NWFETs. As demonstrated by photoluminescence, the bandgap of the prepared In0.2Ga0.8As NWs is 1.28 eV, offering the promise of application in near-infrared (NIR) photodetection. Under 850 nm laser illumination, the fabricated ambipolar NWFETs show extremely low dark currents of 50 pA and 0.5 pA when positive and negative gate voltages are applied, respectively. All the results demonstrate that with careful design of the surface oxide layer and the body defects, NWs are suitable for use in next-generation optoelectronic devices. |
| 语种 | 英语 |
| WOS记录号 | IOP:0957-4484-32-14-ABD358 |
| 出版者 | IOP Publishing |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/41987]  |
| 专题 | 中国科学院过程工程研究所 |
| 通讯作者 | Yang,Zai-Xing |
| 作者单位 | 1.State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China 2.School of Microelectronics, School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People’s Republic of China 3.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China 4.College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao, 266590, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Guo,Yanan,Liu,Dong,Miao,Chengcheng,et al. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection[J]. Nanotechnology,2021,32(14). |
| APA | Guo,Yanan.,Liu,Dong.,Miao,Chengcheng.,Sun,Jiamin.,Pang,Zhiyong.,...&Yang,Zai-Xing.(2021).Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection.Nanotechnology,32(14). |
| MLA | Guo,Yanan,et al."Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection".Nanotechnology 32.14(2021). |
入库方式： OAI收割
来源：过程工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。