Zero bias Schottky diodes use in high performance detection circuits
文献类型：会议论文
| 作者 | Fan, Xiaoxi1; Pei, Xin2 ; Xiong, Xinrong3
|
| 出版日期 | 2011-09-08 |
| 会议日期 | July 29, 2011 - July 31, 2011 |
| 会议地点 | Dalian, China |
| 关键词 | Diodes DC power transmission Detectors MATLAB Microwave measurement Optoelectronic devices Schottky barrier diodes |
| 卷号 | 3 |
| DOI | 10.1109/ICEOE.2011.6013291 |
| 页码 | V327-V330 |
| 国家 | China |
| 英文摘要 | Zero bias Schottky diodes often used as microwave power detectors. The detection law is a function of frequency, temperature, power, DC bias and diode parameters such as n (ideality factor) and Is (saturation current). In order to get wider dynamic range, better thermal stability and more accurate square law response over the dynamic range we analyzed these characteristics of the Schottky diodes in MATLAB. Detailed characteristics analysis, related curves and solve methods have been shown in this paper. 2011 IEEE. |
| 产权排序 | 2 |
| 会议录 | ICEOE 2011 - 2011 International Conference on Electronics and Optoelectronics, Proceedings
 |
| 会议录出版者 | IEEE Computer Society |
| 语种 | 英语 |
| URL标识 | 查看原文 |
| ISSN号 | 978-1-61284-275-2 |
| ISBN号 | 978-1-61284-275-2 |
| 源URL | [http://ir.xao.ac.cn/handle/45760611-7/4153]  |
| 专题 | 微波接收机技术实验室 |
| 作者单位 | 1.College of Medical Engineering and Technology, XinJiang Medical University, Urumqi, China; 2.Xinjiang Astronomical Observatory, Chinese Academy of Sciences, Urumqi, China; 3.Department of Electrical Engineering, XinJiang Mechano-Electrical Vocational and Technical Institute, Urumqi, China |
| 推荐引用方式 GB/T 7714 | Fan, Xiaoxi,Pei, Xin,Xiong, Xinrong. Zero bias Schottky diodes use in high performance detection circuits[C]. 见:. Dalian, China. July 29, 2011 - July 31, 2011. |
入库方式： OAI收割
来源：新疆天文台
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