Elastic-plastic behaviors of silicon carbide crystals
文献类型：期刊论文
| 作者 | Zhu P(朱鹏)2,4; Chen QS(陈启生)2,3,4 ; Prasad, Vishwanath1
|
| 刊名 | MATERIALS TODAY COMMUNICATIONS
 |
| 出版日期 | 2021-06-01 |
| 卷号 | 27页码:9 |
| 关键词 | Dislocations Elastic-plastic material Finite elements |
| DOI | 10.1016/j.mtcomm.2021.102349 |
| 通讯作者 | Chen, Qi-Sheng(qschen@imech.ac.cn) |
| 英文摘要 | The Alexander-Haasen (AH) model has been widely used to analyze the plastic deformation and dislocation generation in crystals. The model is applied to simulate the stress-strain relationship of SiC crystals in the temperature range of 1000-1800 degrees C. Based on the compression test data, the Young's modulus is obtained as a function of temperature, and the Young's modulus at 1292 degrees C estimated from the compression test data is about 8.0 GPa, only one fifty-first of the value at 20 degrees C. The ratio of the activation energy (Q) to stress exponent (n) is suggested to be an intrinsic property of dislocations in temperature regimes below 900 degrees C and above 1100 degrees C. The activation energy Q is found to be 3.9 eV when the temperature is higher than 1100 degrees C, and 0.9 eV when the temperature is less than 900 degrees C. The perfect dislocation proportion is introduced to describe the mixture of the two deformation mechanisms in the transition temperature regime. Then the model is applied to analyze the thermal stresses and dislocation density during the cooling-down process of SiC crystals. The elastic constants at high temperatures are derived from the data in the Brillouin-scattering tests of SiC crystals. The von Mises stress in the crystal is found to decrease to a minimum when temperature is about 1800 K. The maximum dislocation density in the crystal computed after the cooling-down process is about 260 cm(-2), agreeing qualitatively with the experimental data. |
| 分类号 | 二类 |
| WOS关键词 | DISLOCATION GLIDE ; ACTIVATION PARAMETERS ; TEMPERATURE ; DYNAMICS ; GROWTH ; FRACTURE ; STRESS ; YIELD |
| 资助项目 | National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000683038600007 |
| 资助机构 | National Natural Science Foundation of China |
| 其他责任者 | Chen, Qi-Sheng |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/87224]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 作者单位 | 1.Univ North Texas, Dept Mech & Energy Engn, Denton, TX 76203 USA 2.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China; 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 4.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; |
| 推荐引用方式 GB/T 7714 | Zhu P,Chen QS,Prasad, Vishwanath. Elastic-plastic behaviors of silicon carbide crystals[J]. MATERIALS TODAY COMMUNICATIONS,2021,27:9. |
| APA | 朱鹏,陈启生,&Prasad, Vishwanath.(2021).Elastic-plastic behaviors of silicon carbide crystals.MATERIALS TODAY COMMUNICATIONS,27,9. |
| MLA | 朱鹏,et al."Elastic-plastic behaviors of silicon carbide crystals".MATERIALS TODAY COMMUNICATIONS 27(2021):9. |
入库方式： OAI收割
来源：力学研究所
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