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Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering

文献类型：期刊论文

作者Xu Y(许亿); Li GD(李国栋); Li G(李光); Gao FY(高方圆); Xia Y(夏原)
刊名APPLIED SURFACE SCIENCE
出版日期2021-10-30
卷号564页码:10
ISSN号0169-4332
关键词High-entropy alloy nitride films HiPIMS Bias voltage Plasma discharge characteristics Microstructure Hardness
DOI10.1016/j.apsusc.2021.150417
通讯作者Xia, Yuan(xia@imech.ac.cn)
英文摘要The purpose of this paper is to explore the effect of bias voltage on plasma discharge characteristics, element concentration, microstructure, morphology, and mechanical properties of super-hard (AlCrTiVZr)N high-entropy alloy nitride (HEAN) films synthesized by high power impulse magnetron sputtering (HiPIMS). Results show that all HiPIMS-deposited (AlCrTiVZr)N films and the DCMS reference sample present a single NaCl-type FCC structure. Compared with DCMS, HiPIMS can produce a higher ionization fraction of the HEA target elements, thereby improving the structure and mechanical properties, while reducing the deposition rate. With increasing bias voltage in HiPIMS, the ion bombardment is continuously enhanced due to the increasing flux and energy of ionized particles reaching the films. The altered plasma environment splits the growth of (AlCrTiVZr)N films into two regions: The bias voltages of 0 V to -150 V offer a moderate ion bombardment effect, while further increasing bias voltage up to -200 V makes the ion bombardment effect excessive. It is observed that the (AlCrTiVZr)N films deposited at -150 V have a compact and featureless structure with preferred orientation of (111), the smallest grain size of 11.3 nm, a high residual compressive stress of -1.67GPa, thereby exhibiting the highest hardness of 48.3 GPa which attains the super-hard grade.
分类号一类
WOS关键词AL-N COATINGS ; MECHANICAL-PROPERTIES ; SUBSTRATE BIAS ; PULSED-DC ; TIN FILMS ; DEPOSITION ; FREQUENCY ; HIPIMS ; RATES
资助项目National Nature Science Foundation of China[51871230] ; Young Scientists Fund[51701229] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB22040503]
WOS研究方向Chemistry ; Materials Science ; Physics
语种英语
WOS记录号WOS:000675534100003
资助机构National Nature Science Foundation of China ; Young Scientists Fund ; Strategic Priority Research Program of the Chinese Academy of Sciences
其他责任者Xia, Yuan
源URL[http://dspace.imech.ac.cn/handle/311007/87078]  
专题宽域飞行工程科学与应用中心
作者单位1.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China;
推荐引用方式
GB/T 7714		 Xu Y,Li GD,Li G,et al. Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering[J]. APPLIED SURFACE SCIENCE,2021,564:10.
APA 许亿,李国栋,李光,高方圆,&夏原.(2021).Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering.APPLIED SURFACE SCIENCE,564,10.
MLA 许亿,et al."Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering".APPLIED SURFACE SCIENCE 564(2021):10.

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来源：力学研究所

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