Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks
文献类型:期刊论文
作者 | Deng, Tianqi2; Shi, Wen2,3; Wong, Zicong Marvin2; Wu, Gang2; Yang, Xiaoping4; Zheng, Jin-Cheng1,5; Pan, Hui6; Yang, Shuo-Wang2 |
刊名 | JOURNAL OF PHYSICAL CHEMISTRY LETTERS |
出版日期 | 2021-07-29 |
卷号 | 12 |
ISSN号 | 1948-7185 |
DOI | 10.1021/acs.jpclett.1c01731 |
通讯作者 | Wu, Gang(wug@ihpc.a-star.edu.sg) ; Yang, Shuo-Wang(yangsw@ihpc.a-star.edu.sg) |
英文摘要 | The connection between electronic structures of metal-organic frameworks (MOFs) and their building subunits is a key cornerstone for rational MOF material design. Some two-dimensional conjugated MOFs were reported to be topological insulators. However, many of them are not intrinsic as the Fermi levels are far from the topological gaps. The subunit-to-MOF electronic orbital correspondence should be established to bridge their chemical structure and physical properties, thus understanding the design rules toward intrinsic topological insulators. Herein we reveal the fundamental role of the subunit-to-MOF symmetry relation in determining their orbital interaction and hybridization and, consequently, topological characteristics. In particular, such honeycomb-kagome MOFs possess delocalized symmetry-enforced nonbonding electronic states with the topological spin-orbit gap. The nonbonding nature of these states allows tailored band structure modulation through molecular structure and strain engineering, with the potential realization of an intrinsic metal-organic topological insulator. |
WOS关键词 | CONDUCTIVITY ; NANOSHEET |
资助项目 | Agency for Science, Technology and Research (A*STAR) of Singapore[1527200024] ; A*STAR Computational Resource Centre (A*CRC) |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000680449800027 |
资助机构 | Agency for Science, Technology and Research (A*STAR) of Singapore ; A*STAR Computational Resource Centre (A*CRC) |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/123081] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Wu, Gang; Yang, Shuo-Wang |
作者单位 | 1.Xiamen Univ Malaysia, Dept Phys, Sepang 43900, Selangor, Malaysia 2.Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore 3.Sun Yat Sen Univ, Sch Chem, Guangzhou 510275, Peoples R China 4.Chinese Acad Sci, Anhui Key Lab Condensed Matter Phys Extreme Condi, High Magnet Field Lab, HFIPS, Hefei 230031, Anhui, Peoples R China 5.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 6.Univ Macau, Inst Appl Phys & Mat Engn, Taipa 999078, Macao, Peoples R China |
推荐引用方式 GB/T 7714 | Deng, Tianqi,Shi, Wen,Wong, Zicong Marvin,et al. Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2021,12. |
APA | Deng, Tianqi.,Shi, Wen.,Wong, Zicong Marvin.,Wu, Gang.,Yang, Xiaoping.,...&Yang, Shuo-Wang.(2021).Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,12. |
MLA | Deng, Tianqi,et al."Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 12(2021). |
入库方式: OAI收割
来源:合肥物质科学研究院
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