中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks

文献类型:期刊论文

作者Deng, Tianqi2; Shi, Wen2,3; Wong, Zicong Marvin2; Wu, Gang2; Yang, Xiaoping4; Zheng, Jin-Cheng1,5; Pan, Hui6; Yang, Shuo-Wang2
刊名JOURNAL OF PHYSICAL CHEMISTRY LETTERS
出版日期2021-07-29
卷号12
ISSN号1948-7185
DOI10.1021/acs.jpclett.1c01731
通讯作者Wu, Gang(wug@ihpc.a-star.edu.sg) ; Yang, Shuo-Wang(yangsw@ihpc.a-star.edu.sg)
英文摘要The connection between electronic structures of metal-organic frameworks (MOFs) and their building subunits is a key cornerstone for rational MOF material design. Some two-dimensional conjugated MOFs were reported to be topological insulators. However, many of them are not intrinsic as the Fermi levels are far from the topological gaps. The subunit-to-MOF electronic orbital correspondence should be established to bridge their chemical structure and physical properties, thus understanding the design rules toward intrinsic topological insulators. Herein we reveal the fundamental role of the subunit-to-MOF symmetry relation in determining their orbital interaction and hybridization and, consequently, topological characteristics. In particular, such honeycomb-kagome MOFs possess delocalized symmetry-enforced nonbonding electronic states with the topological spin-orbit gap. The nonbonding nature of these states allows tailored band structure modulation through molecular structure and strain engineering, with the potential realization of an intrinsic metal-organic topological insulator.
WOS关键词CONDUCTIVITY ; NANOSHEET
资助项目Agency for Science, Technology and Research (A*STAR) of Singapore[1527200024] ; A*STAR Computational Resource Centre (A*CRC)
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000680449800027
资助机构Agency for Science, Technology and Research (A*STAR) of Singapore ; A*STAR Computational Resource Centre (A*CRC)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123081]  
专题中国科学院合肥物质科学研究院
通讯作者Wu, Gang; Yang, Shuo-Wang
作者单位1.Xiamen Univ Malaysia, Dept Phys, Sepang 43900, Selangor, Malaysia
2.Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore
3.Sun Yat Sen Univ, Sch Chem, Guangzhou 510275, Peoples R China
4.Chinese Acad Sci, Anhui Key Lab Condensed Matter Phys Extreme Condi, High Magnet Field Lab, HFIPS, Hefei 230031, Anhui, Peoples R China
5.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
6.Univ Macau, Inst Appl Phys & Mat Engn, Taipa 999078, Macao, Peoples R China
推荐引用方式
GB/T 7714
Deng, Tianqi,Shi, Wen,Wong, Zicong Marvin,et al. Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2021,12.
APA Deng, Tianqi.,Shi, Wen.,Wong, Zicong Marvin.,Wu, Gang.,Yang, Xiaoping.,...&Yang, Shuo-Wang.(2021).Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,12.
MLA Deng, Tianqi,et al."Designing Intrinsic Topological Insulators in Two-Dimensional Metal-Organic Frameworks".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 12(2021).

入库方式: OAI收割

来源:合肥物质科学研究院

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