中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy

文献类型:期刊论文

作者Weng, S. R.2,3; Zhen, W. L.3; Yan, X.3; Yue, Z. L.3; Hu, H. J.3; Xu, F.3; Zhang, R. R.3; Pi, L.2,3; Zhu, W. K.3; Zhang, C. J.1,3
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2021-09-29
卷号33
ISSN号0953-8984
关键词two-dimensional (2D) materials flexible electronics direct growth photodetector transition metal dichalcogenides (TMDs)
DOI10.1088/1361-648X/ac1368
通讯作者Pi, L.(pili@ustc.edu.cn) ; Zhu, W. K.(wkzhu@hmfl.ac.cn) ; Zhang, C. J.(zhangcj@hmfl.ac.cn)
英文摘要Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe2 film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters.
WOS关键词VAPOR-DEPOSITION ; MOS2 ; PHOTOTRANSISTORS ; NANOSHEETS ; SUBSTRATE ; CRYSTALS ; SENSORS
资助项目National Key Research and Development Program of China[2016YFA0300404] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSC-CIP002]
WOS研究方向Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000678907500001
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of China ; Collaborative Innovation Program of Hefei Science Center, CAS
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123167]  
专题中国科学院合肥物质科学研究院
通讯作者Pi, L.; Zhu, W. K.; Zhang, C. J.
作者单位1.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Weng, S. R.,Zhen, W. L.,Yan, X.,et al. Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2021,33.
APA Weng, S. R..,Zhen, W. L..,Yan, X..,Yue, Z. L..,Hu, H. J..,...&Zhang, C. J..(2021).Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy.JOURNAL OF PHYSICS-CONDENSED MATTER,33.
MLA Weng, S. R.,et al."Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy".JOURNAL OF PHYSICS-CONDENSED MATTER 33(2021).

入库方式: OAI收割

来源:合肥物质科学研究院

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