Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy
文献类型:期刊论文
作者 | Weng, S. R.2,3; Zhen, W. L.3; Yan, X.3; Yue, Z. L.3; Hu, H. J.3; Xu, F.3; Zhang, R. R.3; Pi, L.2,3; Zhu, W. K.3; Zhang, C. J.1,3 |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER |
出版日期 | 2021-09-29 |
卷号 | 33 |
ISSN号 | 0953-8984 |
关键词 | two-dimensional (2D) materials flexible electronics direct growth photodetector transition metal dichalcogenides (TMDs) |
DOI | 10.1088/1361-648X/ac1368 |
通讯作者 | Pi, L.(pili@ustc.edu.cn) ; Zhu, W. K.(wkzhu@hmfl.ac.cn) ; Zhang, C. J.(zhangcj@hmfl.ac.cn) |
英文摘要 | Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe2 film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters. |
WOS关键词 | VAPOR-DEPOSITION ; MOS2 ; PHOTOTRANSISTORS ; NANOSHEETS ; SUBSTRATE ; CRYSTALS ; SENSORS |
资助项目 | National Key Research and Development Program of China[2016YFA0300404] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSC-CIP002] |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000678907500001 |
资助机构 | National Key Research and Development Program of China ; National Natural Science Foundation of China ; Collaborative Innovation Program of Hefei Science Center, CAS |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/123167] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Pi, L.; Zhu, W. K.; Zhang, C. J. |
作者单位 | 1.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Weng, S. R.,Zhen, W. L.,Yan, X.,et al. Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2021,33. |
APA | Weng, S. R..,Zhen, W. L..,Yan, X..,Yue, Z. L..,Hu, H. J..,...&Zhang, C. J..(2021).Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy.JOURNAL OF PHYSICS-CONDENSED MATTER,33. |
MLA | Weng, S. R.,et al."Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe2 film using a new one-step strategy".JOURNAL OF PHYSICS-CONDENSED MATTER 33(2021). |
入库方式: OAI收割
来源:合肥物质科学研究院
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