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Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials

文献类型：期刊论文

作者Wen, Chenhaoping3; Gao, Jingjing4,5; Xie, Yuan3; Zhang, Qing3; Kong, Pengfei3; Wang, Jinghui1,3; Jiang, Yilan3; Luo, Xuan4; Li, Jun1,3; Lu, Wenjian4
刊名PHYSICAL REVIEW LETTERS
出版日期2021-06-23
卷号126
ISSN号0031-9007
DOI10.1103/PhysRevLett.126.256402
通讯作者Sun, Yu-Ping(ypsun@issp.ac.cn) ; Yan, Shichao(yanshch@shanghaitech.edu.cn)
英文摘要Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1T-TaS2-related materials (bulk 1T-TaS2 and 4H(b)-TaS2). 4H(b)-TaS, is a superconducting compound with alternating 1T-TaS2 and 1H-TaS2 layers, where the 1H-TaS2 layer has a weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS2 layers. In the 1T-TaS2 layer of 4H(b)-TaS2, we observe a narrow electronic band located near the Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS2 layers. The weak electronic hybridization between the 1T-TaS2 and 1H-TaS2 layers in 4H(b)-TaS2 shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation-induced band splitting. In contrast, in bulk 1T-TaS2, there is an interlayer CDW coupling-induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS2 and 4H(b)-TaS2, the insulating gap in bulk 1T-TaS2 results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS2 layers.
WOS关键词MOTT-INSULATING STATE ; CHARGE-DENSITY WAVES ; TRANSITION ; ORDER
资助项目Science and Technology Commission of Shanghai Municipality (STCSM)[18QA1403100] ; National Science Foundation of China[61771234] ; National Science Foundation of China[11874042] ; Shanghai Tech University ; National Key Research and Development Program[2016YFA0300404] ; National Nature Science Foundation of China[11674326] ; National Nature Science Foundation of China[11774351] ; National Natural Science Foundation of China[U1832141] ; National Natural Science Foundation of China[U1932217] ; National Natural Science Foundation of China[U2032215] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U2032215] ; Center for High-resolution Electron Microscopy (ChEM)[EM-19430216]
WOS研究方向Physics
语种英语
WOS记录号WOS:000665775100009
出版者AMER PHYSICAL SOC
资助机构Science and Technology Commission of Shanghai Municipality (STCSM) ; National Science Foundation of China ; Shanghai Tech University ; National Key Research and Development Program ; National Nature Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility ; Center for High-resolution Electron Microscopy (ChEM)
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123355]  
专题中国科学院合肥物质科学研究院
通讯作者Sun, Yu-Ping; Yan, Shichao
作者单位1.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
2.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
5.Univ Sci & Technol China, Hefei 230026, Peoples R China
6.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Wen, Chenhaoping,Gao, Jingjing,Xie, Yuan,et al. Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials[J]. PHYSICAL REVIEW LETTERS,2021,126.
APA Wen, Chenhaoping.,Gao, Jingjing.,Xie, Yuan.,Zhang, Qing.,Kong, Pengfei.,...&Yan, Shichao.(2021).Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials.PHYSICAL REVIEW LETTERS,126.
MLA Wen, Chenhaoping,et al."Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials".PHYSICAL REVIEW LETTERS 126(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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