中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 合肥物质科学研究院
  3. 中国科学院合肥物质科学研究院
Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects

文献类型：期刊论文

作者Ming, Hongwei1,3; Zhu, Gaofan1,2; Zhu, Chen1,3; Qin, Xiaoying3; Chen, Tao1,3; Zhang, Jian3; Li, Di3; Xin, Hongxing3; Jabar, Bushra1,3
刊名ACS NANO
出版日期2021-06-22
卷号15
ISSN号1936-0851
关键词thermoelectric Cu2SnSe3 energy band regulation phonon scattering multidimensional defects
DOI10.1021/acsnano.1c03120
通讯作者Qin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn) ; Xin, Hongxing(xinhongxing@issp.ac.cn)
英文摘要As an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity rho and low thermopower S prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved via S alloying, resulting in 1.6 times enhancement of S (from 170 to 277 mu V/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of rho and a 2.2 times enhancement of S (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 mu W cm(-1) K-2 was achieved at similar to 800 K for the Cu2Sn0.82In0.18Se2.7S0.3 sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained via intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe2 nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu2Sn0.82In0.18Se2.7S0.3, which is 4.7-fold larger than that of pristine Cu2SnSe3.
WOS关键词LATTICE THERMAL-CONDUCTIVITY ; FIGURE ; MERIT
资助项目National Natural Science Foundation of China[11674322] ; National Natural Science Foundation of China[51672278] ; National Natural Science Foundation of China[51972307] ; Anhui Provinical Natural Science Foundation[2008085MA18]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000665748900119
资助机构National Natural Science Foundation of China ; Anhui Provinical Natural Science Foundation
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123418]  
专题中国科学院合肥物质科学研究院
通讯作者Qin, Xiaoying; Zhang, Jian; Xin, Hongxing
作者单位1.Univ Sci & Technol China, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Inst Nucl Energy Safety Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Ming, Hongwei,Zhu, Gaofan,Zhu, Chen,et al. Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects[J]. ACS NANO,2021,15.
APA Ming, Hongwei.,Zhu, Gaofan.,Zhu, Chen.,Qin, Xiaoying.,Chen, Tao.,...&Jabar, Bushra.(2021).Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects.ACS NANO,15.
MLA Ming, Hongwei,et al."Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects".ACS NANO 15(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。