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Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions

文献类型：期刊论文

作者Kang, Lili2,3; Jiang, Peng2,3; Zhang, Xiaoli3; Hao, Hua3; Zheng, Xiaohong2,3; Zhang, Lei1,4; Zeng, Zhi2,3
刊名PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
出版日期2021-09-01
卷号133
关键词Ferroelectric tunnel junctions Tunneling electroresistance effect Domain walls Quantum transport First principles
ISSN号1386-9477
DOI10.1016/j.physe.2021.114783
通讯作者Zheng, Xiaohong(xhzheng@theory.issp.ac.cn) ; Zhang, Lei(zhanglei@sxu.edu.cn)
英文摘要Ferroelectric tunnel junctions (FTJs) are very promising as a new type of nonvolatile memory devices due to the tunneling electroresistance (TER) effect. In recent years, with the rise of two-dimensional (2D) materials, 2D ferroelectrics and their application in FTJs have attracted intensive attention, with the advantage of greatly reducing the FTJ based memory device sizes, as demanded by the ongoing device minituriazation in modern electronic circuits. However, all present schemes for realizing giant TER ratio with 2D FTJs are based on the polarization reversal of the whole ferroelectric layer upon an electrical field. In this work, we explore the quantum transport properties of the 2D FTJs with the partial reversal of polarization, namely, the formation of domain walls (DWs) by constructing two kinds of FTJs. One is in a uniform-polarization state and the other one is a state with domain walls. Structural relaxation confirms the stability of the domain-wall state. By quantum transport calculation, we obtain a TER ratio as high as 2.75 x 104%. Further analysis of the electronic structure shows that there is charge accumulation or charge depletion at the two DWs. Such asymmetric interface polarization charges result in a built-in electrical field and thus affect the distribution of the effective potential along the transport direction. This leads to partial metal-insulator transition around the DWs and finally the giant TER ratio. Our results indicate that DWs may greatly affect the quantum transport and provide a new mechanism for realizing giant TER effect in 2D FTJs.
WOS关键词PHYSICS
资助项目National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[11704232] ; National Natural Science Foundation of China[12074230] ; National Key R&D Program of China[2017YFA0304203] ; Shanxi Province 100-Plan Talent Program ; [1331KSC]
WOS研究方向Science & Technology - Other Topics ; Physics
语种英语
WOS记录号WOS:000671121800008
出版者ELSEVIER
资助机构National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123595]  
专题中国科学院合肥物质科学研究院
通讯作者Zheng, Xiaohong; Zhang, Lei
作者单位1.Shanxi Univ, Collaborat Innovat Ctr Extreme Optic, Taiyuan 030006, Peoples R China
2.Univ Sci & Technol China, Sci Isl Branch Grad Sch, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
4.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Optic & Quantum Optic Devic, Taiyuan 030006, Peoples R China
推荐引用方式
GB/T 7714		 Kang, Lili,Jiang, Peng,Zhang, Xiaoli,et al. Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2021,133.
APA Kang, Lili.,Jiang, Peng.,Zhang, Xiaoli.,Hao, Hua.,Zheng, Xiaohong.,...&Zeng, Zhi.(2021).Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,133.
MLA Kang, Lili,et al."Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 133(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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