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Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse

文献类型：期刊论文

作者Tan, Chaoyang4,5; Yin, Shiqi4,5; Chen, Jiawang4,5; Lu, Yuan2,3; Wei, Wensen1; Du, Haifeng1; Liu, Kailang6; Wang, Fakun6; Zhai, Tianyou6; Li, Liang4,5
刊名ACS NANO
出版日期2021-05-25
卷号15
关键词van der Waals heterostructure backward tunneling diode reverse rectification ratio photodetector broken-gap band alignment
ISSN号1936-0851
DOI10.1021/acsnano.0c09593
通讯作者Du, Haifeng(duhf@hmfl.ac.cn) ; Zhai, Tianyou(zhaity@hust.edu.cn) ; Li, Liang(liangli@ahu.edu.cn)
英文摘要Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 10(8) and on/off ratio over 10(8) at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 10(5) due to its ultralow forward current and a comparable photodetectivity of 3.8 X 10(10) Jones. In addition, the response time of such a photodetector reaches 8 mu s owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.
WOS关键词HETEROSTRUCTURE ; MODULATION ; TRANSPORT ; DIODES ; WSE2 ; TRANSISTORS ; GENERATION
资助项目National Natural Science Foundation of China[51902001] ; National Natural Science Foundation of China[21825103] ; Recruitment Program for Leading Talent Team of Anhui Province[2019-16] ; Natural Science Foundation of Anhui Province[1908085QE17]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000656994100035
出版者AMER CHEMICAL SOC
资助机构National Natural Science Foundation of China ; Recruitment Program for Leading Talent Team of Anhui Province ; Natural Science Foundation of Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/123784]  
专题中国科学院合肥物质科学研究院
通讯作者Du, Haifeng; Zhai, Tianyou; Li, Liang
作者单位1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China
2.Natl Univ Def Technol NUDT, State Key Lab Pulsed Power Laser Technol, Hefei 230037, Peoples R China
3.Natl Univ Def Technol NUDT, Infrared & Low Temp Plasma Key Lab Anhui Prov, Hefei 230037, Peoples R China
4.Anhui Univ, Inst Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
5.Anhui Univ, Inst Phys Sci, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
6.Huazhong Univ Sci & Technol HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
推荐引用方式
GB/T 7714		 Tan, Chaoyang,Yin, Shiqi,Chen, Jiawang,et al. Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse[J]. ACS NANO,2021,15.
APA Tan, Chaoyang.,Yin, Shiqi.,Chen, Jiawang.,Lu, Yuan.,Wei, Wensen.,...&Li, Liang.(2021).Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse.ACS NANO,15.
MLA Tan, Chaoyang,et al."Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse".ACS NANO 15(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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