Electronic structure of LaIrIn(5)and f-electron character in its related Ce-115 compounds
文献类型：期刊论文
| 作者 | Zhou, R; Luo, XB; Ding, ZF; Shu, L; Ji, XY; Zhu, ZH; Huang, YB; Shen, DW; Liu, ZT; Liu, ZH |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2020 |
| 卷号 | 63期号:11页码:- |
| 关键词 | SUPERCONDUCTING PHASES HEAVY TRANSITION DYNAMICS RH |
| ISSN号 | 1674-7348 |
| DOI | 10.1007/s11433-019-1564-6 |
| 文献子类 | 期刊论文 |
| 英文摘要 | LaIrIn(5)is a reference compound of the heavy-fermion superconductor CeIrIn5. The lack of f electrons in LaIrIn(5)indicates that there should not be any f electron participating in the construction of its Fermi surface. Thus the electronic structure comparison between LaIrIn5 and CeIrIn5 provides a good platform to study the properties of f electrons. Here angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations are performed to study the electronic structures of LaIrIn(5)and CeIrIn5. We find the valence band structures of the two materials are similar to each other, except for the absence of f bands in LaIrIn5. By analyzing the Fermi crossings of the three conduction bands of the two materials quantitatively, we find the volumes of the electron pockets alpha and beta around the M ' point become larger from LaIrIn(5)to CeIrIn5, while the hole pocket gamma around the Gamma ' point becomes smaller. Together with the calculation results, we confirm that this is mainly originated from the f-electron contribution, while the lattice-constant difference between LaIrIn(5)and CeIrIn(5)only has a finite influence. We also give a summary of the f-electron character in its related Ce-115 heavy fermion compounds. Our results may be essential for the complete microscopic understanding of the 115 compounds and the related heavy-fermion systems. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32842]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 2.Sci & Technol Surface Phys & Chem Lab, Mianyang 621908, Sichuan, Peoples R China 3.Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China 4.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 5.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 6.Chinese Acad Sci, Ctr Excellence Superconducting Elect, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, R,Luo, XB,Ding, ZF,et al. Electronic structure of LaIrIn(5)and f-electron character in its related Ce-115 compounds[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2020,63(11):-. |
| APA | Zhou, R.,Luo, XB.,Ding, ZF.,Shu, L.,Ji, XY.,...&Chen, QY.(2020).Electronic structure of LaIrIn(5)and f-electron character in its related Ce-115 compounds.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,63(11),-. |
| MLA | Zhou, R,et al."Electronic structure of LaIrIn(5)and f-electron character in its related Ce-115 compounds".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 63.11(2020):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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