Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO
文献类型：期刊论文
| 作者 | Liu, JX; Sun, KL; Zheng, XM; Wang, ST; Lian, SC; Deng, CY; Xie, HP; Zhang, X; Gao, YL; Song, F |
| 刊名 | RESULTS IN PHYSICS
 |
| 出版日期 | 2020 |
| 卷号 | 19页码:- |
| 关键词 | TRANSITION-METAL DICHALCOGENIDES MONOLAYER MOS2 PHOTOLUMINESCENCE TRANSISTORS BULK WSE2 |
| ISSN号 | 2211-3797 |
| DOI | 10.1016/j.rinp.2020.103634 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Ultraviolet-Ozone (UVO) treatment has potentially promoted the long-term stability and the high performance of two-dimensional-material-based devices. However, the detailed evolutions of materials upon UVO treatment are less reported and unclear. Herein, we have systematically investigated the evolutions of morphology and electronic properties of the UVO treated few-layered MoS2. A weak p-doping effect on a 1-hour-UVO-exposed bulk MoS2 is revealed by photoelectron spectroscopy, being attributed to the charge transfer from MoS2 to the newly-formed MoOx. Optical microscopy, atomic force microscopy, Raman and PL mapping measurements reveal an inhomogeneous change of MoS2 morphology after UVO treatment. The oxidation is initiated at intrinsic defect sites and dislocations, and then expands in-plane from dislocations to both sides to form one dimensional standing-wave-like features. The dangling-bond-free surface regions remain smooth, being attributed to the higher energetic barrier for O-2 dissociation and chemisorption. A model is proposed to explain the mechanism of inhomogeneous oxidation. The rather different oxidation behavior of MoS2 compared with MoSe2 and MoTe2 can be attributed to the difference in the in-plane chemical bonds. Our findings remind that the device design with UVO oxidation need to take the microstructure changes after treatment into account instead of only taking notice of the doping effect for performance improvement. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32866]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA 2.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China 3.Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Peoples R China 4.Natl Univ Def Technol, Coll Arts & Sci, Changsha 410073, Hunan, Peoples R China 5.Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Pudong New Area, 239 Zhangheng Rd, Shanghai 201204, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JX,Sun, KL,Zheng, XM,et al. Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO[J]. RESULTS IN PHYSICS,2020,19:-. |
| APA | Liu, JX.,Sun, KL.,Zheng, XM.,Wang, ST.,Lian, SC.,...&Huang, H.(2020).Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO.RESULTS IN PHYSICS,19,-. |
| MLA | Liu, JX,et al."Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO".RESULTS IN PHYSICS 19(2020):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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