Interfaces between MoOx and MoX2 (X = S, Se, and Te)
文献类型：期刊论文
| 作者 | Chen, FM; Liu, JX; Zheng, XM; Liu, LH; Xie, HP; Song, F; Gao, YL; Huang, H |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2020 |
| 卷号 | 29期号:11页码:- |
| 关键词 | FIELD-EFFECT TRANSISTORS CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH MONOLAYER MOS2 TRANSPORT-PROPERTIES ELECTRONIC-STRUCTURES GRAPHENE NANORIBBONS LARGE-AREA NANORODS CARBON |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/abb310 |
| 文献子类 | 期刊论文 |
| 英文摘要 | In the past decades there have been many breakthroughs in low-dimensional materials, especially in two-dimensional (2D) atomically thin crystals like graphene. As structural analogues of graphene but with a sizeable band gap, monolayers of atomically thin transition metal dichalcogenides (with formula of MX2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects, and for engineering a wide range of nanoelectronic, optoelectronic, and photocatalytic applications. Transition metal trioxides as promising materials with low evaporation temperature, high work function, and inertness to air have been widely used in the fabrication and modification of MX2. In this review, we reported the fabrications of one-dimensional MoS2 wrapped MoO2 single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoOx covered MoX2 by means of exposing MoX2 to ultraviolet ozone. The prototype devices show good performances. The approaches are common to other transition metal dichalcogenides and transition metal oxides. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32948]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA 2.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, FM,Liu, JX,Zheng, XM,et al. Interfaces between MoOx and MoX2 (X = S, Se, and Te)[J]. CHINESE PHYSICS B,2020,29(11):-. |
| APA | Chen, FM.,Liu, JX.,Zheng, XM.,Liu, LH.,Xie, HP.,...&Huang, H.(2020).Interfaces between MoOx and MoX2 (X = S, Se, and Te).CHINESE PHYSICS B,29(11),-. |
| MLA | Chen, FM,et al."Interfaces between MoOx and MoX2 (X = S, Se, and Te)".CHINESE PHYSICS B 29.11(2020):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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