Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency
文献类型：期刊论文
| 作者 | Haiyun Dong; Yang Zhang; Lijie Cui; Min Guan; Yiyang Li; Zhanping Zhu; Baoqiang Wang; Yiping Zeng |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2020 |
| 卷号 | 535页码:125377 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30487]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Haiyun Dong;Yang Zhang;Lijie Cui;Min Guan;Yiyang Li;Zhanping Zhu;Baoqiang Wang;Yiping Zeng;. Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency[J]. JOURNAL OF CRYSTAL GROWTH,2020,535:125377. |
| APA | Haiyun Dong;Yang Zhang;Lijie Cui;Min Guan;Yiyang Li;Zhanping Zhu;Baoqiang Wang;Yiping Zeng;.(2020).Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency.JOURNAL OF CRYSTAL GROWTH,535,125377. |
| MLA | Haiyun Dong;Yang Zhang;Lijie Cui;Min Guan;Yiyang Li;Zhanping Zhu;Baoqiang Wang;Yiping Zeng;."Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency".JOURNAL OF CRYSTAL GROWTH 535(2020):125377. |
入库方式： OAI收割
来源：半导体研究所
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