Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
文献类型：期刊论文
| 作者 | Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2020 |
| 卷号 | 67期号:3页码:1071-1076 |
| 公开日期 | 2020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30504]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang. Comparative Study of SiC Planar MOSFETs With Different p-Body Designs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(3):1071-1076. |
| APA | Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang.(2020).Comparative Study of SiC Planar MOSFETs With Different p-Body Designs.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(3),1071-1076. |
| MLA | Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang."Comparative Study of SiC Planar MOSFETs With Different p-Body Designs".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.3(2020):1071-1076. |
入库方式： OAI收割
来源：半导体研究所
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