中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film

文献类型:期刊论文

作者Zeng Liu;   Yusong Zhi;   Shan Li;   Yuanyuan Liu;   ;   Xiao Tang;   Zuyong Yan;   Peigang Li;   Xiaohang Li;   Daoyou Guo;   Zhenping Wu;   Weihua Tang
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2020
卷号53期号:8页码:085105
源URL[http://ir.semi.ac.cn/handle/172111/30518]  
专题半导体研究所_半导体集成技术工程研究中心
推荐引用方式
GB/T 7714
Zeng Liu; Yusong Zhi; Shan Li; Yuanyuan Liu; ; Xiao Tang; Zuyong Yan; Peigang Li; Xiaohang Li; Daoyou Guo; Zhenping Wu; Weihua Tang;. Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53(8):085105.
APA Zeng Liu; Yusong Zhi; Shan Li; Yuanyuan Liu; ; Xiao Tang; Zuyong Yan; Peigang Li; Xiaohang Li; Daoyou Guo; Zhenping Wu; Weihua Tang;.(2020).Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53(8),085105.
MLA Zeng Liu; Yusong Zhi; Shan Li; Yuanyuan Liu; ; Xiao Tang; Zuyong Yan; Peigang Li; Xiaohang Li; Daoyou Guo; Zhenping Wu; Weihua Tang;."Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53.8(2020):085105.

入库方式: OAI收割

来源:半导体研究所

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